DG2714DL-T1-E3 Vishay, DG2714DL-T1-E3 Datasheet - Page 2

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DG2714DL-T1-E3

Manufacturer Part Number
DG2714DL-T1-E3
Description
IC,ANALOG SWITCH,SINGLE,SPDT,CMOS,TSSOP,6PIN,PLASTIC
Manufacturer
Vishay
Datasheet

Specifications of DG2714DL-T1-E3

Function
Switch
Circuit
1 x SPDT
On-state Resistance
1.2 Ohm
Voltage Supply Source
Single Supply
Voltage - Supply, Single/dual (±)
1.6 V ~ 3.6 V
Current - Supply
0.01µA
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Number Of Switches
Single
Switch Configuration
SPDT
On Resistance (max)
3 Ohms @ 1.8 V
On Time (max)
75 ns @ 1.8 V
Off Time (max)
39 ns @ 1.8 V
Off Isolation (typ)
- 64 dB
Supply Voltage (max)
3.6 V
Supply Voltage (min)
1.5 V
Supply Current
0.00001 mA @ 3 V @ - 40C to 85C
Maximum Power Dissipation
250 mW
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Switch Current (typ)
+/- 200 mA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
DG2714DL-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DG2714DL-T1-E3
Manufacturer:
Vishay
Quantity:
14 500
Part Number:
DG2714DL-T1-E3
Manufacturer:
AD
Quantity:
7 649
DG2714
Vishay Siliconix
Notes:
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 3.1 mW/°C above 70 °C.
www.vishay.com
2
ABSOLUTE MAXIMUM RATINGS
Parameter
Referenced V+ to GND
IN, COM, NC, NO
Continuous Current (NO, NC and COM Pins)
Peak Current (Pulsed at 1 ms, 10 % duty cycle)
Storage Temperature (D Suffix)
Power Dissipation (Packages)
SPECIFICATIONS (V+ = 1.8 V)
Parameter
Analog Switch
Analog Signal Range
On-Resistance
r
r
Switch Off Leakage Current
Channel-On Leakage Current
Digital Control
Input High Voltage
Input Low Voltage
Input Capacitance
Input Current
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Break-Before-Make Time
Charge Injection
Off-Isolation
Crosstalk
NO, NC Off Capacitance
Channel-On Capacitance
ON
ON
Flatness
Match
d
d
d
d
f
d
d
d
a
d
d
d
d
d
f
f
b
I
V
INL
Flatness
Symbol
I
I
C
C
COM(off)
COM(on)
NO
I
I
V
X
OIRR
NO(off)
NC(off)
Δr
V
Q
V
t
NO(off)
NC(off)
C
r
r
C
t
OFF
TALK
COM
or I
ON
ON
ON
INH
t
, V
INL
ON
INJ
ON
d
in
NC
INH
V+ = 1.8 V, V
6-Pin SO70
V
C
V
V+ = 2.2 V, V
NO
NO
L
V+ = 1.8 V, ± 10 %, V
= 1 nF, V
, V
or V
R
V+ = 1.8 V, V
NC
Otherwise Unless Specified
L
NC
= 50 Ω, C
V
= 0.2 V/2.0 V, V
IN
c
GEN
= 1.5 V, R
COM
Test Conditions
I
NO
= 0 or V+, f = 1 MHz
NO
Figures 1 and 2
V
, V
V+ = 2.2 V
= 0 V, R
, I
IN
= 0 to V+, I
NC
NC
L
= 0 or V+
COM
= 5 pF, f = 1 MHz
= 10 mA
= V
L
= 300 Ω, C
IN
= 0.2 V/0.9 V
GEN
COM
COM
= 0.4 or 1.1 V
NO
= 0 Ω, Figure 3
= 0.2 V/2.0 V
= 2.0 V/0.2 V
, I
NC
L
= 10 mA
= 35 pF
e
Temp
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
- 0.3 to (V+ + 0.3)
d
d
d
d
d
d
- 0.3 to + 4
- 65 to 150
a
± 200
± 300
Limit
250
Min
- 10
- 10
- 10
1.1
- 1
- 1
- 1
- 1
0
3
b
- 40 to 85 °C
S-70852-Rev. B, 30-Apr-07
Document Number: 72308
Limits
Typ
- 64
- 64
1.8
3.5
55
19
13
32
78
c
Max
0.06
3.0
4.5
0.4
V+
10
10
10
75
89
39
40
2
1
1
1
1
b
Unit
mW
mA
°C
V
Unit
pC
nA
pF
µA
dB
pF
ns
V
Ω
V

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