DG213DQ-T1-E3 Vishay, DG213DQ-T1-E3 Datasheet - Page 6

• Manufacturer Part Number: DG213DQ-T1-E3
• Description: 2 NORM OPEN, 2 NORM CLOSED ANALOG SWITCH
• Manufacturer: Vishay

Specifications of DG213DQ-T1-E3

• Function: Switch
• Circuit: 4 x SPST - NC/NO
• On-state Resistance: 85 Ohm
• Current - Supply: 5µA
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 16-TSSOP
• Number Of Switches: Quad
• Switch Configuration: SPST
• On Resistance (max): 110 Ohms @ 12 V
• On Time (max): 200 ns @ 12 V
• Off Time (max): 100 ns @ +/- 15 V
• Off Isolation (typ): 90 dB
• Supply Voltage (max): 40 V
• Supply Voltage (min): 3 V
• Maximum Power Dissipation: 500 mW
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Off State Leakage Current (max): +/- 5 nA
• Switch Current (typ): 30 mA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DG213DQ-T1-E3TR

DG213
Vishay Siliconix
www.vishay.com FaxBack 408-970-5600
4-6
V
V
S1
S2
Off Isolation = 20 log
V
S
V
g
R
g
0V, 2.4 V
= 50
S
IN
S
IN
1
2
+5 V
GND
1
2
V
3 V
R
L
g
FIGURE 4. Off Isolation
C
L
V
V
(includes fixture and stray capacitance)
C
S
O
IN
S
S
IN
GND
GND
+15 V
–15 V
V+
V–
D
D
+15 V
V+
1
2
V+
+15 V
–15 V
–15 V
V–
V–
R
300
L2
D
D
FIGURE 3. Break-Before-Make
C
C
35 pF
V
L2
O2
FIGURE 6. Charge Injection
C
1000 pF
L
R
300
R
V
L1
L
V
O
O
C
35 pF
L1
C = RF bypass
V
X
O1
TALK
V
Isolation = 20 log
S
R
g
The charge injection in coulombs is Q = C
= 50
V
0V, 2.4 V
0V, 2.4 V
O
Logic
Input
Switch
Output
Switch
Output
= measured voltage error due to charge injection
FIGURE 5. Channel-to-Channel Crosstalk
V
IN
O
NC
X
V
V
ON
C
O
S
V
V
V
V
3 V
0 V
0 V
0 V
O1
O2
S1
S2
S
IN
S
IN
1
2
1
2
GND
50%
V+
OFF
V
90%
t
O
D
+15 V
–15 V
V–
S-00787—Rev. F, 17-Apr-00
Document Number: 70662
D
D
90%
L
1
2
x V
ON
C
O
t
D
50
R
V
O
L