CY8C3865LTI-014 Cypress Semiconductor Corp, CY8C3865LTI-014 Datasheet - Page 106

• Manufacturer Part Number: CY8C3865LTI-014
• Description: CY8C3865LTI-014
• Manufacturer: Cypress Semiconductor Corp
• Series: PSOC™ 3 CY8C38xxr

Specifications of CY8C3865LTI-014

• Core Processor: 8051
• Core Size: 8-Bit
• Speed: 67MHz
• Connectivity: EBI/EMI, I²C, LIN, SPI, UART/USART, USB
• Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
• Number Of I /o: 38
• Program Memory Size: 32KB (32K x 8)
• Program Memory Type: FLASH
• Eeprom Size: 1K x 8
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 1.71 V ~ 5.5 V
• Data Converters: A/D 2x20b, D/A 4x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: *
• Operating Temperature (min): -40C
• Operating Temperature (max): 85C
• Technology: CMOS
• Processing Unit: Microcontroller
• Operating Supply Voltage (min): 1.8V
• Operating Supply Voltage (typ): 2.5/3.3/5V
• Operating Supply Voltage (max): 5.5V
• Package Type: QFN EP
• Screening Level: Industrial
• Pin Count: 68
• Mounting: Surface Mount
• Rad Hardened: No
• Processor Series: CY8C38
• Core: 8051
• Data Bus Width: 32 bit
• Data Ram Size: 8 KB
• Interface Type: I2C, SPI, UART, USB
• Maximum Clock Frequency: 67 MHz
• Number Of Programmable I/os: 28 to 72
• Number Of Timers: 4
• Operating Supply Voltage: 0.5 V to 5.5 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Controller Family/series: (8051) PSOC 3
• No. Of I/o's: 38
• Eeprom Memory Size: 1KB
• Ram Memory Size: 4KB
• Cpu Speed: 67MHz
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

11.7.2 EEPROM
Table 11-60. EEPROM DC Specifications
Table 11-61. EEPROM AC Specifications
11.7.3 Nonvolatile Latches (NVL))
Table 11-62. NVL DC Specifications
Table 11-63. NVL AC Specifications
11.7.4 SRAM
Table 11-64. SRAM DC Specifications
Table 11-65. SRAM AC Specifications
Document Number: 001-11729 Rev. *S
T
V
F
Parameter
Parameter
Parameter
Parameter
Parameter
Parameter
WRITE
SRAM
SRAM
Erase and program voltage
Single row erase/write cycle time
EEPROM data retention time,
retention period measured from last
erase cycle
Erase and program voltage
NVL endurance
NVL data retention time
SRAM retention voltage
SRAM operating frequency
Description
Description
Description
Description
Description
Description
Programmed at 25 °C
Programmed at 0 °C to 70 °C
Programmed at 25 °C
Programmed at 0 °C to 70 °C
V
Average ambient temp, T
1M erase/program cycles
Average ambient temp, T
100 K erase/program cycles
Average ambient temp. T
10 K erase/program cycles
DDD
pin
Conditions
Conditions
Conditions
Conditions
Conditions
Conditions
A
A
A
≤ 25 °C,
≤ 55 °C,
≤ 85 °C,
1.71
Min
1.71
Min
Min
Min
100
Min
Min
DC
1.2
1K
20
20
20
20
10
–
PSoC
Typ
Typ
Typ
Typ
Typ
Typ
–
–
–
–
–
–
–
–
2
–
–
–
®
3: CY8C38 Family
67.01
Max
Max
Max
Max
Max
Max
5.5
5.5
20
–
–
–
–
–
–
–
–
program/erase cycles
program/erase cycles
Data Sheet
Page 106 of 130
Units
Units
Units
years
Units
years
years
Units
Units
MHz
ms
V
V
V
[+] Feedback