CY7C168A-20PXC Cypress Semiconductor Corp, CY7C168A-20PXC Datasheet - Page 7

• Manufacturer Part Number: CY7C168A-20PXC
• Description: 16Kb(x4) Fast Async SRAM
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C168A-20PXC

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 16K (4K x 4)
• Speed: 20ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 20-DIP (0.300", 7.62mm)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Switching Waveforms
Document Number: 38-05029 Rev. *C
Notes
10. WE is HIGH for read cycle.
11. Address valid prior to or coincident with CE transition LOW.
12. The internal write time of the memory is defined by the overlap of CE LOW and WE LOW. Both signal must be LOW to initiate a write and either signal can terminate a
13. If CE goes HIGH simultaneously with WE HIGH, the output remains in a high-impedance state.
DATA OUT
CURRENT
ADDRESS
ADDRESS
write by going high. The data input set-up and hold timing should be referenced to the rising edge of the signal that terminates the write.
SUPPLY
DATA I/O
DATA I/O
DATA IN
DATA IN
V
WE
CE
CC
CE
WE
WE
CE
HIGH IMPEDANCE
t
PU
t
t
RCS
LZCE
(continued)
t
DATA UNDEFINED
DATA UNDEFINED
SA
t
SA
t
ACE
50%
Figure 4. Write Cycle No.1 (WE Controlled)
Figure 5. Write Cycle No. 2 (CS Controlled)
Figure 3. Read Cycle
t
SCE
t
RC
t
AW
t
t
AW
WC
t
HZWE
t
WC
t
DATA
HZWE
DATA
t
t
SCE
t
SD
t
PWE
PWE
t
IN
SD
DATA VALID
[10, 11]
IN
VALID
VALID
HIGH IMPEDANCE
t
HD
t
LZWE
[12]
t
HA
t
HIGH IMPEDANCE
[12, 13]
HZCE
t
RCH
t
t
PD
HD
50%
t
HA
IMPEDANCE
HIGH
C168A-6
I
I
CC
SB
CY7C168A
C168A-7
C168A-8
Page 7 of 12
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