CY7C1514V18-250BZC Cypress Semiconductor Corp, CY7C1514V18-250BZC Datasheet - Page 5

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CY7C1514V18-250BZC

Manufacturer Part Number
CY7C1514V18-250BZC
Description
SRAM (Static RAM)
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C1514V18-250BZC

Format - Memory
RAM
Memory Type
SRAM - Synchronous, QDR II
Memory Size
72M (2M x 36)
Speed
250MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 70°C
Package / Case
165-TFBGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C1514V18-250BZC
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Pin Definitions
Document #: 38-05489 Rev. *G
Pin Name
TDO
TCK
TDI
TMS
NC
V
V
V
V
V
V
SS
SS
REF
DD
SS
DDQ
/144M Input
/288M Input
Output
Input
Input
Input
N/A
Input-
Reference
Power Supply Power Supply Inputs to the Core of the Device.
Ground
Power Supply Power Supply Inputs for the Outputs of the Device.
I/O
(continued)
TDO for JTAG.
TCK Pin for JTAG.
TDI Pin for JTAG.
TMS Pin for JTAG.
Not Connected to the Die. Can be tied to any voltage level.
Address Expansion for 144M. Can be tied to any voltage level.
Address Expansion for 288M. Can be tied to any voltage level.
Reference Voltage Input. Static input used to set the reference level for HSTL inputs, outputs, and AC
measurement points.
Ground for the Device.
Pin Description
CY7C1512V18
CY7C1514V18
Page 5 of 26
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