CY7C1514V18-200BZC Cypress Semiconductor Corp, CY7C1514V18-200BZC Datasheet - Page 18

• Manufacturer Part Number: CY7C1514V18-200BZC
• Description: SRAM (Static RAM)
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1514V18-200BZC

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, QDR II
• Memory Size: 72M (2M x 36)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 165-TFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Maximum Ratings
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with Power Applied.. –55°C to +125°C
Supply Voltage on V
Supply Voltage on V
DC Applied to Outputs in High Z ........ –0.5V to V
DC Input Voltage
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage (MIL-STD-883, M. 3015).. > 2001V
Latch up Current.................................................... > 200 mA
Operating Range
Electrical Characteristics
DC Electrical Characteristics
Over the Operating Range
Notes
Document #: 38-05489 Rev. *G
V
V
V
V
V
V
V
V
I
I
V
I
15. Power up: Assumes a linear ramp from 0V to V
16. Output are impedance controlled. I
17. Output are impedance controlled. I
18. V
19. The operation current is calculated with 50% read cycle and 50% write cycle.
Commercial
Industrial
X
OZ
DD
Parameter
DD
DDQ
OH
OL
OH(LOW)
OL(LOW)
IH
IL
REF
[19]
Range
REF
(min) = 0.68V or 0.46V
Power Supply Voltage
IO Supply Voltage
Output HIGH Voltage
Output LOW Voltage
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current
Output Leakage Current
Input Reference Voltage
V
DD
[11]
Temperature (T
Operating Supply
–40°C to +85°C
DD
DDQ
0°C to +70°C
.............................. –0.5V to V
Description
Ambient
Relative to GND ........–0.5V to +2.9V
Relative to GND ...... –0.5V to +V
DDQ
[12]
, whichever is larger, V
OH
OL
= (V
=
A
−
)
(V
DDQ
DDQ
[18]
/2)/(RQ/5) for values of 175 ohms <= RQ <= 350 ohms.
1.8 ± 0.1V
DD
/2)/(RQ/5) for values of 175 ohms <= RQ <= 350 ohms.
V
(min) within 200 ms. During this time V
DD
Note 16
Note 17
I
I
GND ≤ V
GND ≤ V
Typical Value = 0.75V
V
I
f = f
OH
OL
OUT
DD
[15]
REF
= 0.1 mA, Nominal Impedance
= −0.1 mA, Nominal Impedance
MAX
= Max,
= 0 mA,
DDQ
(max) = 0.95V or 0.54V
DD
= 1/t
I
I
V
1.4V to
≤ V
≤ V
+ 0.5V
+ 0.5V
DDQ
V
Test Conditions
CYC
DD
DDQ
DDQ,
DD
[15]
Output Disabled
Neutron Soft Error Immunity
DDQ
LSBU
LMBU
SEL
* No LMBU or SEL events occurred during testing; this column represents a
statistical χ
cation Note AN 54908 “Accelerated Neutron SER Testing and Calculation of
Terrestrial Failure Rates”
Parameter
250 MHz (x18)
200 MHz (x18)
167 MHz (x18)
, whichever is smaller.
IH
< V
DD
2
, 95% confidence limit calculation. For more details refer to Appli-
and V
(x36)
(x36)
(x36)
Logical
Single Bit
Upsets
Logical Multi
Bit Upsets
Single Event
Latch up
Description
DDQ
V
V
< V
DDQ
DDQ
V
V
DD
DDQ
REF
–0.3
0.68
.
Min
V
1.7
1.4
/2 – 0.12
/2 – 0.12
−5
−5
SS
+ 0.1
– 0.2
Conditions
25°C
25°C
85°C
Test
0.75
Typ
1.8
1.5
CY7C1512V18
CY7C1514V18
V
V
Typ
320
DDQ
DDQ
V
V
0
0
DDQ
REF
V
1100
Max
0.95
V
900
800
900
750
800
/2 + 0.12
/2 + 0.12
1.9
0.2
DDQ
DD
5
5
Page 18 of 26
– 0.1
Max* Unit
+ 0.3
0.01
368
0.1
FIT/
FIT/
FIT/
Dev
Mb
Mb
Unit
mA
μA
μA
V
V
V
V
V
V
V
V
V
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