CY7C1480BV33-200AXC Cypress Semiconductor Corp, CY7C1480BV33-200AXC Datasheet - Page 26

• Manufacturer Part Number: CY7C1480BV33-200AXC
• Description: CY7C1480BV33-200AXC
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1480BV33-200AXC

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 72M (2M x 36)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 100-LQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Switching Waveforms
Figure 3
Document Number: 001-15145 Rev. *E
Note
Data Out (Q)
18. On this diagram, when CE is LOW: CE
GW, BWE,
ADDRESS
ADSP
ADSC
BWx
ADV
CLK
OE
CE
shows read cycle timing.
t
ADS
t AS
t CES
A1
t
ADH
t AH
t CEH
t
CH
High-Z
t CYC
t WES
t
CL
Single READ
t CLZ
t WEH
t CO
[18]
1
t ADS
is LOW, CE
A2
Q(A1)
t ADH
t OEHZ
t ADVS
2
is HIGH, and CE
Figure 3. Read Cycle Timing
t ADVH
t OELZ
t OEV
Q(A2)
DON’T CARE
t DOH
t CO
3
is LOW. When CE is HIGH: CE
Q(A2 + 1)
ADV
suspends
burst.
UNDEFINED
Q(A2 + 2)
CY7C1482BV33, CY7C1486BV33
BURST READ
1
is HIGH, CE
Q(A2 + 3)
2
is LOW, or CE
A3
Q(A2)
Burst continued with
new base address
Burst wraps around
to its initial state
CY7C1480BV33
Q(A2 + 1)
3
is HIGH.
t CHZ
Deselect
cycle
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