CY7C1470BV33-167BZI Cypress Semiconductor Corp, CY7C1470BV33-167BZI Datasheet - Page 23

• Manufacturer Part Number: CY7C1470BV33-167BZI
• Description: CY7C1470BV33-167BZI
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1470BV33-167BZI

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 72M (2M x 36)
• Speed: 167MHz
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 165-LFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Switching Waveforms
Figure 5
Notes
Document #: 001-15031 Rev. *C
20. For this waveform ZZ is tied LOW.
21. When CE is LOW, CE
22. Order of the Burst sequence is determined by the status of the MODE (0 = Linear, 1= Interleaved). Burst operations are optional.
In-Out (DQ)
ADDRESS
ADV/LD
shows read-write timing waveform.
Data
BW
CEN
CLK
WE
OE
CE
x
t
t
t
CENS
CES
AS
WRITE
D(A1)
A1
1
1
is LOW, CE
t
t
CENH
t
AH
CEH
WRITE
D(A2)
2
2
is HIGH, and CE
A2
t
CH
t CYC
t
DS
t
CL
D(A2+1)
BURST
WRITE
D(A1)
3
[20, 21, 22]
t
3
DH
is LOW. When CE is HIGH, CE
Figure 5. Read/Write Timing
DON’T CARE
D(A2)
Q(A3)
READ
A3
4
D(A2+1)
Q(A4)
READ
A4
5
t
t
CO
CLZ
UNDEFINED
1
is HIGH, CE
Q(A4+1)
BURST
READ
Q(A3)
6
t
CY7C1472BV33, CY7C1474BV33
DOH
t
OEHZ
2
is LOW or CE
WRITE
D(A5)
Q(A4)
A5
7
t
OEV
t
OELZ
3
Q(A6)
Q(A4+1)
READ
is HIGH.
8
A6
t
t
DOH
CHZ
CY7C1470BV33
WRITE
D(A7)
9
D(A5)
A7
DESELECT
Page 23 of 30
10
Q(A6)
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