CY7C1370DV25-200BZC Cypress Semiconductor Corp, CY7C1370DV25-200BZC Datasheet - Page 14

SRAM (Static RAM)

CY7C1370DV25-200BZC

Manufacturer Part Number
CY7C1370DV25-200BZC
Description
SRAM (Static RAM)
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C1370DV25-200BZC

Format - Memory
RAM
Memory Type
SRAM - Synchronous
Memory Size
18M (512K x 36)
Speed
200MHz
Interface
Parallel
Voltage - Supply
2.375 V ~ 2.625 V
Operating Temperature
0°C ~ 70°C
Package / Case
165-LFBGA
Lead Free Status / RoHS Status
Contains lead / Request inventory verification

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C1370DV25-200BZC
Manufacturer:
CYPRESS
Quantity:
717
Part Number:
CY7C1370DV25-200BZC
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Part Number:
CY7C1370DV25-200BZCT
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
TAP AC Switching Characteristics
Over the Operating Range
Document Number: 38-05558 Rev. *H
Clock
t
t
t
t
Output Times
t
t
Set-up Times
t
t
t
Hold Times
t
t
t
Notes
Parameter
TCYC
TF
TH
TL
TDOV
TDOX
TMSS
TDIS
CS
TMSH
TDIH
CH
9. t
10. Test conditions are specified using the load in TAP AC test Conditions. t
CS
and t
CH
refer to the set-up and hold time requirements of latching data from the boundary scan register.
TCK clock cycle time
TCK clock frequency
TCK clock HIGH time
TCK clock LOW time
TCK clock LOW to TDO valid
TCK clock LOW to TDO invalid
TMS set-up to TCK clock rise
TDI set-up to TCK clock rise
Capture set-up to TCK rise
TMS hold after TCK clock rise
TDI hold after clock rise
Capture hold after clock rise
[9, 10]
Description
R
/t
F
= 1 ns.
Min
50
20
20
0
5
5
5
5
5
5
CY7C1370DV25
CY7C1372DV25
Max
20
10
Page 14 of 29
Unit
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
[+] Feedback

Related parts for CY7C1370DV25-200BZC