CY7C1370D-200BZC Cypress Semiconductor Corp, CY7C1370D-200BZC Datasheet - Page 23

• Manufacturer Part Number: CY7C1370D-200BZC
• Description: CY7C1370D-200BZC
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1370D-200BZC

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 18M (512K x 36)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 165-LFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Switching Waveforms
Notes
Document Number: 38-05555 Rev. *K
28. The Ignore Clock Edge or Stall cycle (Clock 3) illustrated CEN being used to create a pause. A write is not performed during this cycle.
29. Device must be deselected when entering ZZ mode. See cycle description table for all possible signal conditions to deselect the device.
30. I/Os are in High-Z when exiting ZZ sleep mode.
In-Out (DQ)
ADDRESS
ADV/LD
BWx
Data
CEN
CLK
WE
CE
A LL INPUTS
(except ZZ)
Outputs (Q)
WRITE
D(A1)
I
1
A1
SUPPLY
CLK
ZZ
Q(A2)
READ
A2
2
(continued)
Figure 6. NOP,STALL, and DESELECT Cycles
t
ZZI
STALL
t ZZ
I DDZZ
3
Figure 7. ZZ Mode Timing
D(A1)
Q(A3)
READ
A3
4
Q(A2)
WRITE
D(A4)
DON’T CARE
DON’T CARE
A4
5
High-Z
STALL
6
[29, 30]
Q(A3)
UNDEFINED
[25, 26, 28]
NOP
7
DESELECT or READ Only
CY7C1370D, CY7C1372D
t RZZI
t ZZREC
Q(A5)
D(A4)
READ
A5
8
DESELECT
9
CONTINUE
DESELECT
Page 23 of 29
Q(A5)
10
t
CHZ
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