CY7C1350G-133AXIT Cypress Semiconductor Corp, CY7C1350G-133AXIT Datasheet - Page 8

• Manufacturer Part Number: CY7C1350G-133AXIT
• Description: CY7C1350G-133AXIT
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1350G-133AXIT

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 4.5M (128K x 36)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 100-LQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the
device. User guidelines are not tested.
Storage temperature 65 °C to +150 °C
Ambient temperature with
power applied55 °C to +125 °C
Supply voltage on V
Supply voltage on V
DC voltage applied to outputs
in tri-state  0.5 V to V
Electrical Characteristics
Over the Operating Range
Document Number: 38-05524 Rev. *I
V
V
V
V
V
V
I
I
I
I
I
Notes
Parameter
X
OZ
DD
SB1
SB2
12. Overshoot: V
13. T
DD
DDQ
OH
OL
IH
IL
Power-up
: Assumes a linear ramp from 0 V to V
Power supply voltage
I/O supply voltage
Output HIGH voltage
Output LOW voltage
Input HIGH voltage
Input LOW voltage
Input leakage current
except ZZ and MODE
Input current of MODE Input = V
Input current of ZZ
Output leakage current GND  V
V
current
Automatic CE
power-down
current—TTL inputs
Automatic CE
power-down
current—CMOS inputs
IH
DD
(AC) < V
operating supply
Description
DD
DDQ
DD
relative to GND  0.5 V to +4.6 V
relative to GND0.5 V to +V
+ 1.5 V (Pulse width less than t
[12, 13]
[12]
[12]
for 3.3 V I/O, I
for 2.5 V I/O, I
for 2.5 V I/O, I
V
V
V
V
GND  V
Input = V
Input = V
V
f = f
V
V
f = f
V
V
f = 0
for 3.3 V I/O, I
Input = V
DDQ
DDQ
DDQ
DDQ
DD
DD
IN
DD
IN
DD
MAX
MAX
 V
 0.3 V or V
= Max., I
= Max, device deselected,
= Max, device deselected,
(min) within 200 ms. During this time V
= 3.3 V
= 2.5 V
= 3.3 V
= 2.5 V
IH
= 1/t
= 1/t
I
I
SS
DD
SS
DD
or V
 V
 V
DDQ
CYC
CYC
CYC
OUT
DDQ
DDQ,
IN
OH
OH
OL
OL
/2), undershoot: V
+ 0.5 V
IN
 V
=8.0 mA
=1.0 mA
=4.0 mA
=1.0 mA
= 0 mA,
> V
output disabled
IL
DD
Test Conditions
DDQ
– 0.3 V,
IL
(AC) > –2 V (Pulse width less than t
DC input voltage  0.5 V to V
Current into outputs (LOW) ......................................... 20 mA
Static discharge voltage........................................... > 2001 V
(per MIL-STD-883, method 3015)
Latch-up current ..................................................... > 200 mA
Operating Range
Commercial
Industrial
Range
IH
10-ns cycle, 100MHz
10-ns cycle, 100 MHz
All speeds
4-ns cycle, 250 MHz
5-ns cycle, 200 MHz
6-ns cycle, 166 MHz
7.5-ns cycle, 133 MHz
4-ns cycle, 250 MHz
5-ns cycle, 200 MHz
6-ns cycle, 166 MHz
7.5-ns cycle, 133 MHz
< V
DD
and V
Temperature (T
40 °C to +85 °C
DDQ
0 °C to +70 °C
< V
Ambient
DD.
CYC
/2).
A
3.135
2.375
–0.3
–0.3
Min
30
)
2.4
2.0
2.0
1.7
5
–5
5
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
3.3 V – 5%
/ + 10%
V
DD
V
V
DD
DD
CY7C1350G
Max
V
325
265
240
225
205
120
100
110
3.6
0.4
0.4
0.8
0.7
30
90
80
40
+ 0.3 V
+ 0.3 V
–
–
5
–
5
–
5
DD
2.5 V – 5%
DD
Page 8 of 18
to V
V
+ 0.5 V
DDQ
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
A
A
A
A
A
A
V
V
V
V
V
V
V
V
V
V
DD
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