CY7C1315CV18-250BZI Cypress Semiconductor Corp, CY7C1315CV18-250BZI Datasheet - Page 22

• Manufacturer Part Number: CY7C1315CV18-250BZI
• Description: CY7C1315CV18-250BZI
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1315CV18-250BZI

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, QDR II
• Memory Size: 18M (512K x 36)
• Speed: 250MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 165-LFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Electrical Characteristics
DC Electrical Characteristics
Over the Operating Range
AC Electrical Characteristics
Over the Operating Range
Document Number: 001-07165 Rev. *D
I
I
V
V
DD
SB1
Parameter
Parameter
IH
IL
[21]
V
Automatic Power Down
Current
Input HIGH Voltage
Input LOW Voltage
DD
Operating Supply
Description
Description
[14]
[13]
(continued)
V
I
f = f
Max V
Both Ports Deselected,
V
f = f
Inputs Static
OUT
DD
IN
MAX
≥ V
MAX
= Max,
= 0 mA,
DD
IH
= 1/t
= 1/t
,
or V
Test Conditions
Test Conditions
CYC
CYC
IN
≤ V
,
IL
200 MHz
167 MHz
300 MHz
278 MHz
250 MHz
200 MHz
167 MHz
CY7C1313CV18, CY7C1315CV18
CY7C1311CV18, CY7C1911CV18
(x18)
(x36)
(x18)
(x36)
(x18)
(x36)
(x18)
(x36)
(x18)
(x36)
(x18)
(x36)
(x18)
(x36)
(x8)
(x9)
(x8)
(x9)
(x8)
(x9)
(x8)
(x9)
(x8)
(x9)
(x8)
(x9)
(x8)
(x9)
V
REF
Min
Min
–
+ 0.2
Typ
Typ
–
–
V
REF
Max
Max
560
570
590
675
495
490
505
570
290
300
325
385
260
265
300
355
250
250
290
325
230
230
250
270
220
220
230
250
–
– 0.2
Page 22 of 31
Unit
Unit
mA
mA
mA
mA
mA
mA
mA
V
V
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