CY7C1315BV18-250BZXC Cypress Semiconductor Corp, CY7C1315BV18-250BZXC Datasheet - Page 9

• Manufacturer Part Number: CY7C1315BV18-250BZXC
• Description: SRAM (Static RAM)
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1315BV18-250BZXC

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, QDR II
• Memory Size: 18M (512K x 36)
• Speed: 250MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 165-LFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Functional Overview
The
CY7C1315BV18 are synchronous pipelined Burst SRAMs with a
read port and a write port. The read port is dedicated to read
operations and the write port is dedicated to write operations.
Data flows into the SRAM through the write port and flows out
through the read port. These devices multiplex the address
inputs to minimize the number of address pins required. By
having separate read and write ports, the QDR-II completely
eliminates the need to “turn-around” the data bus and avoids any
possible data contention, thereby simplifying system design.
Each access consists of four 8-bit data transfers in the case of
CY7C1311BV18, four 9-bit data transfers in the case of
CY7C1911BV18, four 18-bit data transfers in the case of
CY7C1313BV18, and four 36-bit data transfers in the case of
CY7C1315BV18 in two clock cycles.
Accesses for both ports are initiated on the positive input clock
(K). All synchronous input timing is referenced from the rising
edge of the input clocks (K and K) and all output timing is refer-
enced to the output clocks (C and C, or K and K when in single
clock mode).
All synchronous data inputs (D
controlled by the input clocks (K and K). All synchronous data
outputs (Q
rising edge of the output clocks (C and C, or K and K when in
single clock mode).
All synchronous control (RPS, WPS, BWS
through input registers controlled by the rising edge of the input
clocks (K and K).
CY7C1313BV18 is described in the following sections. The
same
CY7C1911BV18, and CY7C1315BV18.
Read Operations
The CY7C1313BV18 is organized internally as four arrays of
256K x 18. Accesses are completed in a burst of four sequential
18-bit data words. Read operations are initiated by asserting
RPS active at the rising edge of the positive input clock (K). The
address presented to address inputs is stored in the read
address register. Following the next K clock rise, the
corresponding lowest order 18-bit word of data is driven onto the
Q
subsequent rising edge of C the next 18-bit data word is driven
onto the Q
words have been driven out onto Q
valid 0.45 ns from the rising edge of the output clock (C or C, or
K or K when in single clock mode). To maintain the internal logic,
each read access must be allowed to complete. Each read
access consists of four 18-bit data words and takes two clock
cycles to complete. Therefore, read accesses to the device
cannot be initiated on two consecutive K clock rises. The internal
logic of the device ignores the second read request. Read
accesses can be initiated on every other K clock rise. Doing so
Document Number: 38-05620 Rev. *F
[17:0]
CY7C1311BV18,
using C as the output timing reference. On the
basic
[x:0]
[17:0]
) pass through output registers controlled by the
. This process continues until all four 18-bit data
descriptions
CY7C1911BV18,
[x:0]
apply
) pass through input registers
[17:0]
. The requested data is
to
[x:0]
CY7C1313BV18,
CY7C1311BV18,
) inputs pass
pipelines the data flow such that data is transferred out of the
device on every rising edge of the output clocks (C and C, or K
and K when in single clock mode).
When the read port is deselected, the CY7C1311BV18 first
completes the pending read transactions. Synchronous internal
circuitry automatically tri-states the outputs following the next
rising edge of the positive output clock (C). This enables for a
seamless transition between devices without the insertion of wait
states in a depth expanded memory.
Write Operations
Write operations are initiated by asserting WPS active at the
rising edge of the positive input clock (K). On the following K
clock rise the data presented to D
the lower 18-bit write data register, provided BWS
asserted active. On the subsequent rising edge of the negative
input clock (K) the information presented to D
in the write data register, provided BWS
active. This process continues for one more cycle until four 18-bit
words (a total of 72 bits) of data are stored in the SRAM. The 72
bits of data are then written into the memory array at the specified
location. Therefore, write accesses to the device cannot be
initiated on two consecutive K clock rises. The internal logic of
the device ignores the second write request. Write accesses can
be initiated on every other rising edge of the positive input clock
(K). Doing so pipelines the data flow such that 18 bits of data can
be transferred into the device on every rising edge of the input
clocks (K and K).
When deselected, the write port ignores all inputs after the
pending write operations have been completed.
Byte Write Operations
Byte write operations are supported by the CY7C1311BV18. A
write operation is initiated as described in the
section. The bytes that are written are determined by BWS
BWS
Asserting the appropriate Byte Write Select input during the data
portion of a write latches the data being presented and writes it
into the device. Deasserting the Byte Write Select input during
the data portion of a write enables the data stored in the device
for that byte to remain unaltered. This feature can be used to
simplify read, modify, or write operations to a byte write
operation.
Single Clock Mode
The CY7C1311BV18 can be used with a single clock that
controls both the input and output registers. In this mode the
device recognizes only a single pair of input clocks (K and K) that
control both the input and output registers. This operation is
identical to the operation if the device had zero skew between
the K/K and C/C clocks. All timing parameters remain the same
in this mode. To use this mode of operation, the user must tie C
and C HIGH at power on. This function is a strap option and not
alterable during device operation.
1
, which are sampled with each set of 18-bit data words.
CY7C1313BV18, CY7C1315BV18
CY7C1311BV18, CY7C1911BV18
[17:0]
is latched and stored into
[1:0]
[17:0]
are both asserted
Write Operations
is also stored
[1:0]
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are both
0
and
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