CY7C1315BV18-200BZXI Cypress Semiconductor Corp, CY7C1315BV18-200BZXI Datasheet - Page 10

• Manufacturer Part Number: CY7C1315BV18-200BZXI
• Description: CY7C1315BV18-200BZXI
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1315BV18-200BZXI

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, QDR II
• Memory Size: 18M (512K x 36)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 165-LFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document Number: 38-05620 Rev. *C
Write Cycle Descriptions
Note:
BWS
10. Assumes a Write cycle was initiated per the Write Port Cycle Description Truth Table. NWS
portions of a Write cycle, as long as the set-up and hold requirements are achieved.
0
H
H
H
H
L
L
L
L
/NWS
0
BWS
1
H
H
H
H
L
L
L
L
/NWS
1
L–H
L–H
L–H
L–H
K
–
–
–
–
(CY7C1311BV18 and CY7C1313BV18)
L–H During the Data portion of a Write sequence :
L–H During the Data portion of a Write sequence :
L–H No data is written into the devices during this portion of a write operation.
L-H During the Data portion of a Write sequence:
K
–
–
–
–
During the Data portion of a Write sequence:
CY7C1311BV18 − both nibbles (D
CY7C1313BV18 − both bytes (D
CY7C1311BV18 − both nibbles (D
CY7C1313BV18 − both bytes (D
During the Data portion of a Write sequence :
CY7C1311BV18 − only the lower nibble (D
remain unaltered,
CY7C1313BV18 − only the lower byte (D
remain unaltered.
CY7C1311BV18 − only the lower nibble (D
remain unaltered,
CY7C1313BV18 − only the lower byte (D
remain unaltered.
During the Data portion of a Write sequence :
CY7C1311BV18 − only the upper nibble (D
remain unaltered,
CY7C1313BV18 − only the upper byte (D
remain unaltered.
CY7C1311BV18 − only the upper nibble (D
remain unaltered,
CY7C1313BV18 − only the upper byte (D
remain unaltered.
No data is written into the devices during this portion of a write operation.
0
[17:0]
[17:0]
, NWS
[2, 10]
[7:0]
[7:0]
Comments
) are written into the device.
) are written into the device.
) are written into the device,
) are written into the device,
1
, BWS
[8:0]
[8:0]
[17:9]
[17:9]
[3:0]
[3:0]
[7:4]
[7:4]
0
, BWS
) is written into the device. D
) is written into the device. D
) is written into the device. D
) is written into the device. D
) is written into the device. D
) is written into the device. D
) is written into the device. D
) is written into the device. D
1
, BWS
2
and BWS
CY7C1313BV18
CY7C1315BV18
CY7C1311BV18
CY7C1911BV18
3
can be altered on different
Page 10 of 28
[17:9]
[17:9]
[8:0]
[8:0]
[7:4]
[7:4]
[3:0]
[3:0]
will
will
will
will
will
will
will
will
[+] Feedback