AM29LV160DT-120EI Spansion Inc., AM29LV160DT-120EI Datasheet - Page 18

• Manufacturer Part Number: AM29LV160DT-120EI
• Description: IC,EEPROM,NOR FLASH,1MX16/2MX8,CMOS,TSSOP,48PIN,PLASTIC
• Manufacturer: Spansion Inc.

Specifications of AM29LV160DT-120EI

• Rohs Compliant: NO

18
(Word Mode)
(Word Mode)
Addresses
Addresses
1Bh
1Ch
1Dh
1Eh
2Ah
2Bh
2Ch
2Dh
2Eh
3Ah
3Bh
3Ch
1Fh
20h
21h
22h
23h
24h
25h
26h
27h
28h
29h
2Fh
30h
31h
32h
33h
34h
35h
36h
37h
38h
39h
(Byte Mode)
(Byte Mode)
Addresses
Addresses
3Ah
3Ch
3Eh
4Ah
4Ch
4Eh
5Ah
5Ch
5Eh
6Ah
6Ch
6Eh
36h
38h
40h
42h
44h
46h
48h
50h
52h
54h
56h
58h
60h
62h
64h
66h
68h
70h
72h
74h
76h
78h
Table 7. Device Geometry Definition
000Ah
001Eh
0027h
0036h
0000h
0000h
0004h
0000h
0000h
0005h
0000h
0004h
0000h
0015h
0002h
0000h
0000h
0000h
0004h
0000h
0000h
0040h
0000h
0001h
0000h
0020h
0000h
0000h
0000h
0080h
0000h
0000h
0000h
0001h
Data
Data
Table 6. System Interface String
V
D7–D4: volt, D3–D0: 100 millivolt
V
D7–D4: volt, D3–D0: 100 millivolt
V
V
Typical timeout per single byte/word write 2
Typical timeout for Min. size buffer write 2
Typical timeout per individual block erase 2
Typical timeout for full chip erase 2
Max. timeout for byte/word write 2
Max. timeout for buffer write 2
Max. timeout per individual block erase 2
Max. timeout for full chip erase 2
Device Size = 2
Flash Device Interface description (refer to CFI publication 100)
Max. number of byte in multi-byte write = 2
(00h = not supported)
Number of Erase Block Regions within device
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
Erase Block Region 2 Information
Erase Block Region 3 Information
Erase Block Region 4 Information
Am29LV160D
CC
CC
PP
PP
Min. voltage (00h = no V
Max. voltage (00h = no V
Min. (write/erase)
Max. (write/erase)
N
byte
PP
Description
Description
PP
N
times typical
pin present)
N
pin present)
N
N
times typical (00h = not supported)
times typical
ms (00h = not supported)
N
N
N
times typical
N
N
µs (00h = not supported)
ms
µs