AM29F080B-90EI Spansion Inc., AM29F080B-90EI Datasheet - Page 37

• Manufacturer Part Number: AM29F080B-90EI
• Description: Flash Memory IC
• Manufacturer: Spansion Inc.

Specifications of AM29F080B-90EI

• Memory Size: 8Mbit
• Memory Configuration: 1M X 8
• Ic Interface Type: Parallel
• Access Time: 80ns
• Memory Case Style: TSOP
• No. Of Pins: 40
• Mounting Type: Surface Mount
• Peak Reflow Compatible (260 C): No
• Supply Voltage Max: 5.5V
• Rohs Compliant: No
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

REVISION SUMMARY
Revision A (July 1997)
Initial release.
Revision B (January 1998)
Global
Formatted for consistency with other 5.0 volt-only
data sheets.
Figure 9, Read Operation Timings
Corrected RESET# waveform so that it is high for the
duration of the read cycle.
Figure 11, Chip/Sector Erase Operation Timings
Corrected data unlock cycle in diagram to 55h.
Figure 17, Alternate CE# Controlled Program
Operation Timings
Corrected command for sector erase to 30h, chip erase
to 10h.
Revision C (January 1998)
Standby Mode
Removed sentence in first paragraph referring to
RESET# pulse.
Sector Group Protection/Unprotection, Temporary
Sector Group Unprotect
Changed references from “sector” to “sector group”.
Corrected text to indicate sector groups are composed
of two adjacent sectors.
Revision D (May 1998)
Distinctive Characteristics
Changed minimum 100K write/erase cycles guaran-
teed to 1,000,000.
DC Characteristics, CMOS Compatible
For I
and RESET# are now ±0.5 V.
AC Characteristics
Erase/Program Operations; Erase and Program Oper-
ations Alternate CE# Controlled Writes: Corrected the
notes reference for t
eters are 100% tested. Corrected the note reference
for t
Temporary Sector Unprotect Table
Added note reference for t
100% tested.
Command Definitions
Corrected the shift in the table header.
January 3, 2002
VCS
CC3
. This parameter is not 100% tested.
and I
CC4
, the voltage tolerances given for CE#
WHWH1
VIDR
and t
. This parameter is not
WHWH2
. These param-
Am29F080B
Erase and Programming Performance
Changed minimum 100K program and erase cycles
guaranteed to 1,000,000.
Revision E (January 1999)
Global
Updated for CS39S process technology.
Distinctive Characteristics
Added:
DC Characteristics—CMOS Compatible
Added note “For CMOS mode only, I
max at extended temperatures (> +85°C)
DC Characteristics—TTL/NMOS Compatible and
CMOS Compatible
I
specifications are tested with V
I
Revision E+1 (March 23, 1999)
Operating Ranges
The temperature ranges are now specified as ambient.
Revision E+2 (April 9, 1999)
Ordering Information, Operating Ranges
Added the extended temperature range.
Revision F (November 15, 1999)
AC Characteristics—Figure 11. Program
Operations Timing and Figure 12. Chip/Sector
Erase Operations
Deleted t
high.
Physical Dimensions
Replaced figures with more detailed illustrations.
Revision F+1 (May 18, 2000)
DC Characteristics
TTL/NMOS Compatible: The ICC2 specifications are
now identical to those for CMOS compatible.
Revision G (December 4, 2000)
Added table of contents.
Ordering Information
Deleted burn-in option.
CC1
CC3
20-year data retention at 125 C
— Reliable operation for the life of the system
, I
, I
CC4
CC2
GHWL
: Deleted V
, I
CC3
and changed OE# waveform to start at
, I
CC4
CC
: Added Note 2 “Maximum I
= V
CC
Max.
CC
= V
CC3
CCmax
= I
”.
CC4
”.
= 20 µA
37
CC