AM29F080B-90EI Spansion Inc., AM29F080B-90EI Datasheet - Page 37

Flash Memory IC

AM29F080B-90EI

Manufacturer Part Number
AM29F080B-90EI
Description
Flash Memory IC
Manufacturer
Spansion Inc.

Specifications of AM29F080B-90EI

Memory Size
8Mbit
Memory Configuration
1M X 8
Ic Interface Type
Parallel
Access Time
80ns
Memory Case Style
TSOP
No. Of Pins
40
Mounting Type
Surface Mount
Peak Reflow Compatible (260 C)
No
Supply Voltage Max
5.5V
Rohs Compliant
No
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AM29F080B-90EI
Manufacturer:
AMD
Quantity:
4 596
Part Number:
AM29F080B-90EI
Manufacturer:
AMD
Quantity:
4 596
Part Number:
AM29F080B-90EI
Quantity:
2 796
REVISION SUMMARY FOR AM29F080B
Revision B
Global
Formatted for consistency with other 5.0 volt-only data
sheets.
Figure 9, Read Operation Timings
Corrected RESET# waveform so that it is high for the
duration of the read cycle.
Figure 11, Chip/Sector Erase Operation Timings
Corrected data unlock cycle in diagram to 55h.
Figure 17, Alternate CE# Controlled Program
Operation Timings
Corrected command for sector erase to 30h, chip erase
to 10h.
Revision C
Standby Mode
Removed sentence in first paragraph referring to RE-
SET# pulse.
Sector Group Protection/Unprotection, Temporary
Sector Group Unprotect
Changed references from “sector” to “sector group”.
Corrected text to indicate sector groups are composed
of two adjacent sectors.
Trademarks
Copyright © 1998 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are trademarks of Advanced Micro Devices, Inc.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
P R E L I M I N A R Y
Am29F080B
Revision C+1
Distinctive Characteristics
Changed minimum 100K write/erase cycles guaran-
teed to 1,000,000.
AC Characteristics
Erase/Program Operations; Erase and Program Oper-
ations Alternate CE# Controlled Writes: Corrected the
notes reference for t
eters are 100% tested. Corrected the note reference for
t
Temporary Sector Unprotect Table
Added note reference for t
100% tested.
Command Definitions
Corrected the shift in the table header.
Erase and Programming Performance
Changed minimum 100K program and erase cycles
guaranteed to 1,000,000.
VCS
. This parameter is not 100% tested.
WHWH1
VIDR
and t
. This parameter is not
WHWH2
. These param-
37

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