AM29F040B-90EI Spansion Inc., AM29F040B-90EI Datasheet - Page 30

• Manufacturer Part Number: AM29F040B-90EI
• Description: Flash Memory IC
• Manufacturer: Spansion Inc.

Specifications of AM29F040B-90EI

• Memory Configuration: 512K X 8
• Ic Interface Type: Parallel
• Access Time: 90ns
• Memory Case Style: TSOP
• No. Of Pins: 32
• Peak Reflow Compatible (260 C): No
• Supply Voltage Max: 5.5V
• Leaded Process Compatible: No
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25
2. Under worst case conditions of 90°C, V
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the four-bus-cycle command sequence for programming. See Table
6. The device has a guaranteed minimum erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Includes all pins except V
TSOP PIN CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
28
Input Voltage with respect to V
V
Sector Erase Time
Chip Erase Time
Byte Programming Time
Chip Programming Time (Note
CC
Parameter Symbol
programming typicals assume checkerboard pattern.
program faster than the maximum byte program time listed. If the maximum byte program time given is exceeded, only then
does the device set DQ5 = 1. See the section on DQ5 for further information.
for further information on command definitions.
Current
C
C
C
OUT
IN2
IN
Parameter
A
= 25°C, f = 1.0 MHz.
CC
Input Capacitance
Output Capacitance
Control Pin Capacitance
. Test conditions: V
SS
3)
on all I/O pins
Parameter Description
(Note
Typ
3.6
1
8
7
CC
1)
= 4.5 V (4.75 V for -55), 1,000,000 cycles.
CC
D A T A
(Note
= 5.0 V, one pin at a time.
Max
10.8
300
64
8
2)
Am29F040B
Unit
sec
sec
sec
µs
S H E E T
Excludes 00h programming prior to erasure (Note
Excludes system-level overhead (Note
V
V
V
OUT
IN
IN
°
= 0
= 0
C, 5.0 V V
= 0
Test Setup
CC
, 1,000,000 cycles. Additionally,
Comments
–100 mA
–1.0 V
Typ
8.5
7.5
Min
6
21445E5 November 1, 2006
5)
Max
7.5
12
9
V
+100 mA
CC
Max
4)
+ 1.0 V
Unit
pF
pF
pF
4