ADN2531ACPZ-R7 Analog Devices Inc, ADN2531ACPZ-R7 Datasheet - Page 4

• Manufacturer Part Number: ADN2531ACPZ-R7
• Description: 10G LDD
• Manufacturer: Analog Devices Inc
• Type: Laser Diode Driverr

Specifications of ADN2531ACPZ-R7

• Data Rate: 11.3Gbps
• Number Of Channels: 1
• Voltage - Supply: 3 V ~ 3.6 V
• Current - Supply: 36mA
• Current - Modulation: 80mA
• Current - Bias: 100mA
• Operating Temperature: -40°C ~ 100°C
• Package / Case: 16-VFQFN, CSP Exposed Pad
• Mounting Type: Surface Mount
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ADN2531
Parameter
POWER SUPPLY
1
2
3
4
5
6
7
8
9
PACKAGE THERMAL SPECIFICATIONS
Table 2.
Parameter
θ
θ
IC Junction Temperature
The voltage between the pin with the specified compliance voltage and GND.
Specified for T
The pattern used is composed of a repetitive sequence of eight 1s followed by eight 0s at 10.7 Gbps.
Measured using the high speed characterization circuit shown in Figure 22.
The pattern used is K28.5 (00111110101100000101) at 10.7 Gbps rate.
The pattern used is K28.5 (00111110101100000101) at 11.3 Gbps rate.
Measured at balanced IMODP and IMODN.
Only includes current in the ADN2531 VCC pins.
Includes current in ADN2531 VCC pins and dc current in IMODP and IMODN pull-up inductors. See the
J-TOP
J-PAD
V
I
I
CC
SUPPLY
CC
8
9
A
= −40°C to +85°C due to test equipment limitation. See the
Min
65
2.6
AND I
72.2
5.8
Typ
I
ALS
BIAS
MOD
90%
10%
Min
3.0
Max
79.4
10.7
125
Figure 2. ALS Timing Diagram
ASSERT TIME
Typ
3.3
36
55
Typical Performance Characteristics
Rev. 0 | Page 4 of 20
ALS
Unit
°C/W
°C/W
°C
Max
3.6
62
NEGATE TIME
ALS
Test Conditions/Comments
Thermal resistance from junction to top of package.
Thermal resistance from junction to bottom of exposed pad.
Unit
V
mA
mA
Power Consumption
section for data on performance for T
Test Conditions/Comments
V
V
BSET
BSET
t
t
= V
= V
MSET
MSET
section for total supply current calculation.
= 0 V
= 0 V
A
= −40°C to +100°C.