ADG658YRU-REEL7 Analog Devices Inc, ADG658YRU-REEL7 Datasheet - Page 5

• Manufacturer Part Number: ADG658YRU-REEL7
• Description: IC,ANALOG MUX,SINGLE,8-CHANNEL,CMOS,TSSOP,16PIN,PLASTIC
• Manufacturer: Analog Devices Inc

Specifications of ADG658YRU-REEL7

• Rohs Status: RoHS non-compliant
• Function: Multiplexer
• Circuit: 1 x 8:1
• On-state Resistance: 75 Ohm
• Voltage Supply Source: Single, Dual Supply
• Voltage - Supply, Single/dual (±): 2 V ~ 12 V, ±2 V ~ 6 V
• Current - Supply: 0.01µA
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 16-TSSOP (0.173", 4.40mm Width)

5 V SINGLE SUPPLY
V
Table 2.
Parameter
ANALOG SWITCH
LEAKAGE CURRENTS
DIGITAL INPUTS
DYNAMIC CHARACTERISTICS
DD
Analog Signal Range
On Resistance (R
On Resistance Match between
On Resistance Flatness (R
Source OFF Leakage I
Drain OFF Leakage I
Channel ON Leakage I
Input High Voltage, V
Input Low Voltage, V
Input Current
C
t
t
t
Break-Before-Make Time Delay, t
Charge Injection
Off Isolation
Channel-to-Channel Crosstalk
−3 dB Bandwidth
C
C
TRANSITION
ON
OFF
IN
S
D
= 5 V ± 10%, V
Channels (∆R
ADG658
ADG659
ADG658
ADG659
I
(ADG659)
ADG658
ADG659
ADG658
ADG659
(OFF)
, Digital Input Capacitance
(OFF)
INL
(EN)
(EN)
or I
INH
ON
ON
)
SS
)
= 0 V, GND = 0 V, unless otherwise noted.
D
INL
INH
S
(OFF)
D
(OFF)
, I
S
FLAT(ON)
(ON)
1
)
BBM
+25°C
85
150
4.5
8
13
±0.005
±0.2
±0.005
±0.2
±0.1
±0.005
±0.2
±0.1
0.005
2
120
200
120
190
35
50
100
0.5
1
−90
−90
180
330
5
29
15
B Version
−40°C
to +85°C
160
9
14
270
245
60
Rev. B | Page 5 of 20
Y Version
−40°C
to +125°C
0 to V
200
10
16
±5
±5
±2.5
±5
±2.5
2.4
0.8
±1
300
280
70
10
DD
Unit
V
Ω typ
Ω max
Ω typ
Ω max
Ω typ
nA typ
nA max
nA typ
nA max
nA max
nA typ
nA max
nA max
V min
V max
μA typ
μA max
pF typ
ns typ
ns max
ns typ
ns max
ns typ
ns max
ns typ
ns min
pC typ
pC max
dB typ
dB typ
MHz typ
MHz typ
pF typ
pF typ
pF typ
Test Conditions/Comments
V
V
V
V
V
V
V
V
V
R
V
R
V
R
V
R
V
V
R
R
R
f = 1 MHz
f = 1 MHz
f = 1 MHz
L
L
L
L
L
L
L
DD
S
S
DD
DD
S
S
S
IN
S
S
S
S1
S
= 0 V to 4.5 V, I
= 3.5 V, I
= 1 V/4.5 V, V
= 1 V/4.5 V, V
= V
= 300 Ω, C
= 3 V; see Figure 25
= 300 Ω, C
= 3 V; see Figure 27
= 300 Ω, C
= 3 V; see Figure 27
= 300 Ω, C
= 2.5 V, R
= 50 Ω, C
= 50 Ω, C
= 50 Ω, C
= V
= V
= 4.5 V, V
= 5 V, V
= 5.5 V
D
INL
S2
= 1 V or 4.5 V, see Figure 24
= 3 V; see Figure 26
or V
S
SS
S
L
L
L
= 1 mA
SS
= 0 Ω, C
= 5 pF, f = 1 MHz; see Figure 29
= 5 pF; f = 1 MHz; see Figure 31
= 5 pF; see Figure 30
= 0 V, V
INH
L
L
L
L
= 35 pF
= 35 pF
= 35 pF
= 35 pF
= 0 V
D
D
= 4.5 V/1 V; see Figure 22
= 4.5 V/1 V; see Figure 23
S
= 1 mA; see Figure 21
S
L
= 1.5 V to 4 V, I
ADG658/ADG659
= 1 nF; see Figure 28
S
= 1 mA