ADG1414BRUZ-REEL7 Analog Devices Inc, ADG1414BRUZ-REEL7 Datasheet - Page 3

• Manufacturer Part Number: ADG1414BRUZ-REEL7
• Description: ?15V,?5V,+12V ICMOS 8xSPST With SPI
• Manufacturer: Analog Devices Inc
• Series: iCMOS®r

Specifications of ADG1414BRUZ-REEL7

• Function: Switch
• Circuit: 8 x SPST - NO
• On-state Resistance: 21.5 Ohm
• Voltage Supply Source: Dual, Single, Dual Supply
• Voltage - Supply, Single/dual (±): ±5V, 12V, ±15V
• Current - Supply: 0.001µA
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 24-TSSOP (0.173", 4.40mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SPECIFICATIONS
±15 V DUAL SUPPLY
V
Table 1.
Parameter
ANALOG SWITCH
LEAKAGE CURRENTS
DIGITAL INPUTS
LOGIC OUTPUTS (SDO)
DYNAMIC CHARACTERISTICS
DD
On-Resistance Match Between
On-Resistance Flatness (R
Source Off Leakage, I
Drain Off Leakage, I
Channel On Leakage, I
Input High Voltage, V
Input Low Voltage, V
Input Current
Digital Input Capacitance, C
High Impedance Output
t
t
Charge Injection
Off Isolation
Channel-to-Channel Crosstalk
Total Harmonic Distortion (THD + N)
−3 dB Bandwidth
C
C
Analog Signal Range
On Resistance (R
Output Low Voltage, V
High Impedance Leakage Current
Insertion Loss
ON
OFF
D
D
= 15 V ± 10%, V
Channels (ΔR
Capacitance
, C
, C
S
S
(Off )
(On)
1
ON
ON
)
SS
)
D
INL
= −15 V ± 10%, V
S
(Off )
INH
(Off )
D
OL
, I
1
S
FLAT(ON)
(On)
1
IN
)
L
+25°C
9.5
11.5
0.55
1
1.6
1.9
±0.05
±0.15
±0.05
±0.15
±0.1
±0.3
±0.001
4
0.001
4
75
93
25
35
10
−73
−75
0.05
256
0.55
8
32
= 2.7 V to 5.5 V, GND = 0 V, unless otherwise noted.
−40°C to
+85°C
14
1.5
2.15
±1
±1
±2
110
35
Rev. 0 | Page 3 of 20
−40°C to
+125°C
V
16
1.7
2.3
±2
±2
±4
2.0
0.8
±0.1
0.4
0.6
±1
120
35
SS
to V
DD
Unit
V
Ω typ
Ω max
Ω typ
Ω max
Ω typ
Ω max
nA typ
nA max
nA typ
nA max
nA typ
nA max
V min
V max
μA typ
μA max
pF typ
V max
V max
μA typ
μA max
pF typ
ns typ
ns max
ns typ
ns max
pC typ
dB typ
dB typ
% typ
MHz typ
dB typ
pF typ
pF typ
Test Conditions/Comments
V
−10 mA; see Figure 23
V
−10 mA
V
−10 mA
V
V
V
V
V
I
I
R
V
R
V
V
R
R
R
Figure 29
R
R
f = 1 MHz
f = 1 MHz
SINK
SINK
L
L
L
L
L
L
L
DD
DD
DD
DD
S
S
S
IN
S
S
S
= ±10 V, V
= ±10 V, V
= V
= 100 Ω, C
= 10 V; see Figure 30
= 100 Ω, C
= 10 V; see Figure 30
= 0 V, R
= 50 Ω, C
= 50 Ω, C
= 110 Ω, 15 V p-p, f = 20 Hz to 20 kHz; see
= 50 Ω, C
= 50 Ω, C
= V
= +13.5 V, V
= +13.5 V, V
= +13.5 V, V
= +16.5 V, V
= 3 mA
= 6 mA
D
GND
= ±10 V; see Figure 25
S
or V
= 0 Ω, C
L
L
L
L
D
D
= 5 pF, f = 1 MHz; see Figure 26
= 5 pF, f = 1 MHz; see Figure 27
= 5 pF; see Figure 28
= 5 pF, f = 1 MHz; see Figure 28
L
L
L
=
=
= 35 pF
= 35 pF
SS
SS
SS
SS
∓
∓
= −13.5 V, V
= −13.5 V, V
= −13.5 V, V
= −16.5 V
10 V; see Figure 24
10 V; see Figure 24
L
= 1 nF; see Figure 31
S
S
S
ADG1414
= ±10 V, I
= ±10 V, I
= ±10 V, I
S
S
S
=
=
=