ADF4106BRUZ-RL Analog Devices Inc, ADF4106BRUZ-RL Datasheet - Page 5

• Manufacturer Part Number: ADF4106BRUZ-RL
• Description: IC,FREQUENCY SYNTHESIZER,CMOS,TSSOP,16PIN,PLASTIC
• Manufacturer: Analog Devices Inc
• Type: Clock/Frequency Synthesizer (RF)r

Specifications of ADF4106BRUZ-RL

• Pll: Yes
• Input: CMOS
• Output: Clock
• Number Of Circuits: 1
• Ratio - Input:output: 2:1
• Differential - Input:output: Yes/No
• Frequency - Max: 6GHz
• Divider/multiplier: No/No
• Voltage - Supply: 2.7 V ~ 3.3 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 16-TSSOP
• Frequency-max: 6GHz
• Number Of Elements: 1
• Supply Current: 13mA
• Pll Input Freq (min): 20MHz
• Pll Input Freq (max): 6GHz
• Operating Supply Voltage (typ): 3V
• Operating Temp Range: -40C to 85C
• Package Type: TSSOP
• Output Frequency Range: Up to 325MHz
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.3V
• Operating Temperature Classification: Industrial
• Pin Count: 16
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: EVAL-ADF4106EBZ1 - BOARD EVAL FOR ADF4106
• Lead Free Status / Rohs Status: Compliant

ABSOLUTE MAXIMUM RATINGS
T
Table 3.
Parameter
AV
AV
V
V
Digital I/O Voltage to GND
Analog I/O Voltage to GND
REF
Operating Temperature Range
Storage Temperature Range
Maximum Junction Temperature
TSSOP θ
LFCSP θ
Reflow Soldering
Transistor Count
1
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
GND = AGND = DGND = 0 V.
P
P
A
Industrial (B Version)
(Paddle Soldered)
Peak Temperature
Time at Peak Temperature
CMOS
Bipolar
to GND
to AV
DD
DD
= 25°C, unless otherwise noted.
IN
, RF
to GND
to DV
JA
DD
JA
IN
A, RF
Thermal Impedance
Thermal Impedance
DD
1
IN
B to GND
Rating
–0.3 V to + 3.6 V
–0.3 V to + 0.3 V
–0.3 V to + 5.8 V
–0.3 V to + 5.8 V
–0.3 V to V
–0.3 V to V
–0.3 V to V
–40°C to +85°C
–65°C to +125°C
150°C
112°C/W
30.4°C/W
260°C
40 sec
6425
303
DD
P
DD
+ 0.3 V
+ 0.3 V
+ 0.3 V
Rev. C | Page 5 of 24
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
This device is a high performance RF integrated circuit with an
ESD rating of <2 kV, and it is ESD sensitive. Proper precautions
should be taken for handling and assembly.
ADF4106