ADA4932-1YCPZ-R7 Analog Devices Inc, ADA4932-1YCPZ-R7 Datasheet - Page 7

Lw Cst/Lw Pwr Diff ADC Driver

ADA4932-1YCPZ-R7

Manufacturer Part Number
ADA4932-1YCPZ-R7
Description
Lw Cst/Lw Pwr Diff ADC Driver
Manufacturer
Analog Devices Inc
Datasheet

Specifications of ADA4932-1YCPZ-R7

Design Resources
Single-Ended-to-Differential High Speed Drive Circuit for 16-Bit, 10 MSPS AD7626 ADC (CN0105)
Amplifier Type
Differential
Number Of Circuits
1
Output Type
Differential
Slew Rate
2800 V/µs
-3db Bandwidth
560MHz
Current - Input Bias
2.5µA
Voltage - Input Offset
500µV
Current - Supply
9.6mA
Current - Output / Channel
80mA
Voltage - Supply, Single/dual (±)
3 V ~ 11 V, ±1.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 105°C
Mounting Type
Surface Mount
Package / Case
16-LFCSP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain Bandwidth Product
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
ADA4932-1YCPZ-R7TR

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ABSOLUTE MAXIMUM RATINGS
Table 7.
Parameter
Supply Voltage
Power Dissipation
Input Current, +IN, −IN, PD
Storage Temperature Range
Operating Temperature Range
Lead Temperature (Soldering, 10 sec)
Junction Temperature
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational section of
this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device
reliability.
THERMAL RESISTANCE
θ
to a high thermal conductivity 2s2p circuit board, as described
in EIA/JESD 51-7.
Table 8. Thermal Resistance
Package Type
ADA4932-1, 16-Lead LFCSP (Exposed Pad)
ADA4932-2, 24-Lead LFCSP (Exposed Pad)
MAXIMUM POWER DISSIPATION
The maximum safe power dissipation in the ADA4932-x
package is limited by the associated rise in junction temperature
(T
transition temperature, the plastic changes its properties. Even
temporarily exceeding this temperature limit can change the
stresses that the package exerts on the die, permanently shifting
the parametric performance of the ADA4932-x. Exceeding a
junction temperature of 150°C for an extended period can result
in changes in the silicon devices, potentially causing failure.
JA
ADA4932-1
ADA4932-2
J
) on the die. At approximately 150°C, which is the glass
is specified for the device (including exposed pad) soldered
Rating
11 V
See Figure 4
±5 mA
−65°C to +125°C
−40°C to +105°C
−40°C to +105°C
300°C
150°C
θ
91
65
JA
Unit
°C/W
°C/W
Rev. A | Page 7 of 28
The power dissipated in the package (P
quiescent power dissipation and the power dissipated in the
package due to the load drive. The quiescent power is the voltage
between the supply pins (V
The power dissipated due to the load drive depends upon the
particular application. The power due to load drive is calculated
by multiplying the load current by the associated voltage drop
across the device. RMS voltages and currents must be used in
these calculations.
Airflow increases heat dissipation, effectively reducing θ
addition, more metal directly in contact with the package leads/
exposed pad from metal traces, through holes, ground, and power
planes reduces θ
Figure 4 shows the maximum safe power dissipation in the
package vs. the ambient temperature for the single 16-lead
LFCSP (91°C/W) and the dual 24-lead LFCSP (65°C/W) on a
JEDEC standard 4-layer board with the exposed pad soldered to
a PCB pad that is connected to a solid plane.
ESD CAUTION
Figure 4. Maximum Power Dissipation vs. Ambient Temperature for
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
–40
–20
JA
.
ADA4932-1
AMBIENT TEMPERATURE (°C)
0
a 4-Layer Board
ADA4932-2
S
ADA4932-1/ADA4932-2
) times the quiescent current (I
20
40
D
) is the sum of the
60
80
100
JA
. In
S
).

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