BZV49-C47,115 NXP Semiconductors, BZV49-C47,115 Datasheet - Page 6

• Manufacturer Part Number: BZV49-C47,115
• Description: DIODE ZENER 47V 1W SOT89
• Manufacturer: NXP Semiconductors

Specifications of BZV49-C47,115

• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Voltage - Zener (nom) (vz): 47V
• Voltage - Forward (vf) (max) @ If: 1V @ 50mA
• Current - Reverse Leakage @ Vr: 50nA @ 32.9V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (max) (zzt): 170 Ohm
• Mounting Type: Surface Mount
• Operating Temperature: -65°C ~ 150°C
• Zener Voltage: 47 V
• Voltage Tolerance: 5 %
• Voltage Temperature Coefficient: 46.1 mV / K
• Power Dissipation: 1 W
• Maximum Reverse Leakage Current: 0.05 uA
• Maximum Zener Impedance: 170 Ohms
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 933606120115; BZV49-C47 T/R; BZV49-C47 T/R

NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. Device mounted on a ceramic substrate; area = 2.5 cm
GRAPHICAL DATA
2005 Feb 03
R
R
SYMBOL
handbook, halfpage
Voltage regulator diodes
th(j-tp)
th(j-a)
(1) T
(2) T
Fig.2
P ZSM
(W)
10
10
j
j
10
= 25 °C (prior to surge).
= 150 °C (prior to surge).
1
10
3
2
Maximum permissible non-repetitive peak
reverse power dissipation versus duration.
−1
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
PARAMETER
1
(1)
(2)
duration (ms)
MBG801
10
6
2
; thickness = 0.7 mm.
note 1
handbook, halfpage
T
Fig.3
j
= 25 °C.
(mA)
300
I F
200
100
CONDITIONS
0
0.6
Forward current as a function of forward
voltage; typical values.
0.8
VALUE
BZV49 series
125
15
V F (V)
Product data sheet
MBG781
UNIT
K/W
K/W
1