ADF4350BCPZ Analog Devices Inc, ADF4350BCPZ Datasheet - Page 6

F-N With High Performance Integrated VCO

ADF4350BCPZ

Manufacturer Part Number
ADF4350BCPZ
Description
F-N With High Performance Integrated VCO
Manufacturer
Analog Devices Inc
Type
Fanout Distribution, Fractional N, Integer N, Clock/Frequency Synthesizer (RF)r
Datasheet

Specifications of ADF4350BCPZ

Design Resources
Broadband Low EVM Direct Conversion Transmitter (CN0134) Broadband Low EVM Direct Conversion Transmitter Using LO Divide-by-2 Modulator (CN0144) Using low noise linear drop-out regulators to power wideband PLL & VCO IC's (CN0147)
Pll
Yes
Input
CMOS
Output
Clock
Number Of Circuits
1
Ratio - Input:output
1:3
Differential - Input:output
No/No
Frequency - Max
4.4GHz
Divider/multiplier
Yes/Yes
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
32-LFCSP
Frequency-max
4.4GHz
Frequency
4.4GHz
Supply Voltage Range
3V To 3.6V
Digital Ic Case Style
LFCSP
No. Of Pins
32
Operating Temperature Range
-40°C To +85°C
Clock External Input
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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ADF4350
ABSOLUTE MAXIMUM RATINGS
T
Table 3.
Parameter
AV
AV
V
V
Digital I/O Voltage to GND
Analog I/O Voltage to GND
REF
Operating Temperature Range
Storage Temperature Range
Maximum Junction Temperature
LFCSP θ
Reflow Soldering
1
GND = AGND = DGND = 0 V
VCO
VCO
A
(Paddle-Soldered)
Peak Temperature
Time at Peak Temperature
DD
DD
= 25°C, unless otherwise noted.
IN
to GND
to AV
to GND
to DV
to GND
JA
DD
Thermal Impedance
DD
1
Rating
−0.3 V to +3.9 V
−0.3 V to +0.3 V
−0.3 V to +3.9 V
−0.3 V to +0.3 V
−0.3 V to V
−0.3 V to V
−0.3 V to V
−40°C to +85°C
−65°C to +125°C
150°C
27.3°C/W
260°C
40 sec
DD
DD
DD
+ 0.3 V
+ 0.3 V
+ 0.3 V
Rev. 0 | Page 6 of 28
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
This device is a high-performance RF integrated circuit with an
ESD rating of <0.5 kV and is ESD sensitive. Proper precautions
should be taken for handling and assembly.
TRANSISTOR COUNT
24202 (CMOS) and 918 (bipolar)
ESD CAUTION

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