BZV55-B16,115 NXP Semiconductors, BZV55-B16,115 Datasheet - Page 2
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BZV55-B16,115
Manufacturer Part Number
BZV55-B16,115
Description
DIODE ZENER 13V 500MW SOD80C
Manufacturer
NXP Semiconductors
Type
Voltage Regulatorr
Datasheet
1.BZV55-C43115.pdf
(13 pages)
Specifications of BZV55-B16,115
Package / Case
LL-34, LLDS, MiniMELF, SOD80C
Mounting Type
Surface Mount
Power - Max
500mW
Tolerance
±2%
Current - Reverse Leakage @ Vr
50nA @ 11.2V
Voltage - Forward (vf) (max) @ If
900mV @ 10mA
Voltage - Zener (nom) (vz)
13V
Impedance (max) (zzt)
40 Ohm
Zener Voltage
16 V
Voltage Tolerance
2 %
Voltage Temperature Coefficient
12.4 mV / K
Power Dissipation
500 mW
Maximum Reverse Leakage Current
0.05 uA
Maximum Zener Impedance
40 Ohms
Maximum Operating Temperature
+ 200 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Configuration
Single
Package Type
Mini MELF
Zener Voltage (typ)
16V
Zener Test Current
5mA
Knee Impedance
40Ohm
Operating Temperature Classification
Military
Rev Curr
50nA
Mounting
Surface Mount
Pin Count
2
Operating Temp Range
-65C to 200C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
933827800115::BZV55-B16 T/R::BZV55-B16 T/R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BZV55-B16,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
NXP Semiconductors
3. Ordering information
4. Marking
5. Limiting values
6. Thermal characteristics
BZV55_SER
Product data sheet
Table 3.
[1]
Table 4.
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
Table 6.
[1]
Type number
BZV55-B2V4 to
BZV55-C75
Type number
BZV55-B2V4 to BZV55-C75
Symbol
I
I
P
T
Symbol
P
T
R
R
F
ZSM
stg
j
ZSM
tot
th(j-a)
th(j-sp)
The series consists of 74 types with nominal working voltages from 2.4 V to 75 V.
t
Device mounted on a ceramic substrate of 10 10 0.6 mm.
Device mounted on a ceramic substrate of 10 10 0.6 mm.
p
= 100 s; square wave; T
Ordering information
Marking codes
Limiting values
Thermal characteristics
[1]
Parameter
forward current
non-repetitive peak
reverse current
non-repetitive peak
reverse power dissipation
total power dissipation
storage temperature
junction temperature
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
All information provided in this document is subject to legal disclaimers.
Package
Name
-
Rev. 5 — 26 January 2011
j
= 25 C prior to surge
Description
hermetically sealed glass surface-mounted
package; 2 connectors
Conditions
T
T
Conditions
in free air
amb
tp
50 C
50 C
Marking code
marking band
[1]
[1]
[2]
[2]
[1]
BZV55 series
Min
-
-
-
-
-
65
65
Min
-
-
Voltage regulator diodes
Typ
-
-
© NXP B.V. 2011. All rights reserved.
Max
250
see
Table 8
and
40
400
500
+200
+200
9
Max
380
300
Version
SOD80C
Unit
mA
W
mW
mW
C
C
Unit
K/W
K/W
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