BZT52H-C16,115 NXP Semiconductors, BZT52H-C16,115 Datasheet - Page 6

• Manufacturer Part Number: BZT52H-C16,115
• Description: DIODE ZENER 16V 375MW SOD123F
• Manufacturer: NXP Semiconductors

Specifications of BZT52H-C16,115

• Package / Case: SOD-123 Flat Leads
• Voltage - Zener (nom) (vz): 16V
• Voltage - Forward (vf) (max) @ If: 900mV @ 10mA
• Current - Reverse Leakage @ Vr: 50nA @ 11.2V
• Tolerance: ±5%
• Power - Max: 375mW
• Impedance (max) (zzt): 20 Ohm
• Mounting Type: Surface Mount
• Operating Temperature: -65°C ~ 150°C
• Zener Voltage: 16.2 V
• Voltage Tolerance: 6 %
• Voltage Temperature Coefficient: 12.2 mV / K
• Power Dissipation: 830 mW
• Maximum Reverse Leakage Current: 0.05 uA
• Maximum Zener Impedance: 20 Ohms
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-3757-2; 934059407115; BZT52H-C16 T/R

NXP Semiconductors
Table 9.
T
[1]
[2]
Table 10.
T
[1]
[2]
BZT52H_SER
Product data sheet
BZT52H
-xxx
27
30
33
36
39
43
47
51
BZT52H
-xxx
56
62
68
75
j
j
= 25
= 25
f = 1 MHz; V
t
f = 1 MHz; V
t
p
p
= 100 μs; T
= 100 μs; T
°
°
C unless otherwise specified.
C unless otherwise specified.
Sel
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
Sel
B
C
B
C
B
C
B
C
Characteristics per type; BZT52H-B27 to BZT52H-C51
Characteristics per type; BZT52H-B56 to BZT52H-C75
R
R
amb
amb
Working
voltage
V
I
Min
26.5
25.1
29.4
28.0
32.3
31.0
35.3
34.0
38.2
37.0
42.1
40.0
46.1
44.0
50.0
48.0
Working
voltage
V
I
Min
54.9
52.0
60.8
58.0
66.6
64.0
73.5
70.0
= 0 V.
= 0 V.
Z
Z
Z
Z
= 2 mA
= 2 mA
(V);
(V);
= 25 °C.
= 25 °C.
Max
27.5
28.9
30.6
32.0
33.7
35.0
36.7
38.0
39.8
41.0
43.9
46.0
47.9
50.0
52.0
54.0
Max
57.1
60.0
63.2
66.0
69.4
72.0
76.5
79.0
Maximum differential
resistance r
I
250
250
250
250
300
325
325
350
Maximum differential
resistance r
I
375
400
400
400
Z
Z
= 1 mA
= 0.5 mA I
All information provided in this document is subject to legal disclaimers.
dif
I
40
40
40
60
75
80
90
100
dif
Z
120
140
160
175
Z
= 5 mA
(Ω)
(Ω)
= 2 mA Max
Rev. 3 — 7 December 2010
Reverse
current I
Max
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
Reverse
current I
0.05
0.05
0.05
0.05
18.9
21
23.1
25.2
27.3
30.1
32.9
39.2
43.4
47.6
52.5
V
35.7
V
R
R
R
R
(μA)
(μA)
(V)
(V)
Single Zener diodes in a SOD123F package
Temperature
coefficient
S
I
Min
21.4
24.4
27.4
30.4
33.4
37.6
42.0
46.6
Temperature
coefficient
S
I
Min
52.2
58.8
65.6
73.4
Z
Z
Z
Z
= 5 mA
= 5 mA
(mV/K);
(mV/K);
Max
25.3
29.4
33.4
37.4
41.2
46.6
51.8
57.2
Max
63.8
71.6
79.8
88.6
BZT52H series
Diode
capacitance
C
Max
50
50
45
45
45
40
40
40
Diode
capacitance
C
Max
40
35
35
35
d
d
(pF)
(pF)
[1]
[1]
© NXP B.V. 2010. All rights reserved.
Non-repetitive
peak reverse
current
I
Max
1.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
Non-repetitive
peak reverse
current
I
Max
0.3
0.3
0.25
0.20
ZSM
ZSM
(A)
(A)
[2]
[2]
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