BZX79-B3V0,113 NXP Semiconductors, BZX79-B3V0,113 Datasheet - Page 6
![DIODE ZENER 3V 500MW DO-35](/photos/5/24/52490/568-do-35_sod27_sml.jpg)
BZX79-B3V0,113
Manufacturer Part Number
BZX79-B3V0,113
Description
DIODE ZENER 3V 500MW DO-35
Manufacturer
NXP Semiconductors
Datasheet
1.BZX79-C5V1113.pdf
(10 pages)
Specifications of BZX79-B3V0,113
Voltage - Zener (nom) (vz)
3V
Voltage - Forward (vf) (max) @ If
900mV @ 10mA
Current - Reverse Leakage @ Vr
10µA @ 1V
Tolerance
±2%
Power - Max
500mW
Impedance (max) (zzt)
95 Ohm
Mounting Type
Through Hole
Package / Case
DO-204AH, DO-35, Axial
Operating Temperature
-65°C ~ 200°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
933549940113
BZX79-B3V0 T/R
BZX79-B3V0 T/R
BZX79-B3V0 T/R
BZX79-B3V0 T/R
NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed circuit-board without metallization pad.
GRAPHICAL DATA
2002 Feb 27
R
R
handbook, full pagewidth
SYMBOL
Voltage regulator diodes
th j-tp
th j-a
R th j-a
(K/W)
10
10
10
1
3
2
10
−1
thermal resistance from junction to tie-point lead length 8 mm.
thermal resistance from junction to ambient lead length max.; see Fig.2 and note 1
Fig.2 Thermal resistance from junction to ambient as a function of pulse duration.
1
PARAMETER
δ = 1
0.75
0.50
0.33
0.20
0.10
0.05
0.02
0.01
≤0.001
10
10
6
2
CONDITIONS
10
3
t p
10
4
T
BZX79 series
t p (ms)
VALUE
Product data sheet
δ
300
380
=
t p
T
MBG930
10
5
UNIT
K/W
K/W