BYV28-100-TR Vishay, BYV28-100-TR Datasheet - Page 2

Rectifiers 3.5 Amp 100 Volt 90 Amp IFSM

BYV28-100-TR

Manufacturer Part Number
BYV28-100-TR
Description
Rectifiers 3.5 Amp 100 Volt 90 Amp IFSM
Manufacturer
Vishay
Datasheet

Specifications of BYV28-100-TR

Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
100 V
Forward Voltage Drop
1.1 V at 5 A
Recovery Time
30 ns
Forward Continuous Current
3.5 A
Max Surge Current
90 A
Reverse Current Ir
100 uA at 110 V
Mounting Style
Through Hole
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Package / Case
SOD-64
Repetitive Reverse Voltage Vrrm Max
100V
Forward Current If(av)
3.5A
Forward Voltage Vf Max
1.1V
Reverse Recovery Time Trr Max
30ns
Forward Surge Current Ifsm Max
90A
Diode Type
Fast Recovery
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
TYPICAL CHARACTERISTICS (T
Document Number: 86044
Rev. 1.7, 25-Aug-10
MAXIMUM THERMAL RESISTANCE (T
PARAMETER
Junction ambient
ELECTRICAL CHARACTERISTICS (T
PARAMETER
Forward voltage
Reverse current
Reverse recovery time
Fig. 1 - Max. Thermal Resistance vs. Lead Length
16453
Fig. 2 - Forward Current vs. Forward Voltage
0.001
0.01
100
949548
0.1
10
40
30
20
10
0
1
0.0
0
T
j
= 175 °C
0.4
5
V
F
l - Lead Length (mm)
- Forward Voltage (V)
10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
0.8
T
For technical questions within your region, please contact one of the following:
j
= 25 °C
15
1.2
I
F
T
= 0.5 A, I
l
L
Lead length l = 10 mm, T
V
= constant
20
On PC board with spacing 25 mm
I
R
TEST CONDITION
F
1.6
BYV28-50, BYV28-100, BYV28-150, BYV28-200
= V
amb
= 5 A, T
Ultra-Fast Avalanche Sinterglass
l
V
RRM
25
R
R
I
TEST CONDITION
F
= 25 °C, unless otherwise specified)
V
2.0
= 1 A, i
= V
= 5 A
RSM
, T
j
amb
= 175 °C
RRM
j
30
= 165 °C
amb
R
= 25 °C, unless otherwise specified)
= 0.25 A
= 25 °C, unless otherwise specified)
L
= constant
Diode
PART
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
SYMBOL
Fig. 4 - Reverse Current vs. Junction Temperature
16455
SYMBOL
16454
DiodesEurope@vishay.com
R
R
1000
100
thJA
thJA
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
V
V
I
I
I
t
10
R
R
R
rr
F
F
1
0
25
V
20
R
T
= V
amb
50
T
R
PCB: d = 25 mm
j
MIN.
40
RRM
thJA
- Junction Temperature (°C)
- Ambient Temperature (°C)
-
-
-
-
-
-
Vishay Semiconductors
≤ 70 K/W
60
75
VALUE
80 100 120 140 160 180
25
70
100
TYP.
-
-
-
-
-
-
V
half sine wave
R
l = 10 mm
R
thJA
125
= V
≤ 25 K/W
RRM
MAX.
150
0.89
100
150
1.1
30
1
www.vishay.com
175
UNIT
K/W
K/W
UNIT
μA
μA
μA
ns
V
V
73

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