VS-8E2TL06-M Vishay, VS-8E2TL06-M Datasheet - Page 5

Rectifiers 8A 600V Hyperfast Vf 1V TO-220 Ha Free

VS-8E2TL06-M

Manufacturer Part Number
VS-8E2TL06-M
Description
Rectifiers 8A 600V Hyperfast Vf 1V TO-220 Ha Free
Manufacturer
Vishay
Datasheet

Specifications of VS-8E2TL06-M

Product
Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
600 V
Forward Voltage Drop
1 V
Recovery Time
255 ns
Forward Continuous Current
16 A
Max Surge Current
125 A
Reverse Current Ir
10 uA
Mounting Style
Through Hole
Package / Case
TO-220AC
Diode Type
Fast Recovery
Repetitive Reverse Voltage Vrrm Max
600V
Forward Current If(av)
8A
Forward Voltage Vf Max
1.07V
Reverse Recovery Time Trr Max
250ns
Forward Surge Current Ifsm
RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Document Number: 93168
Revision: 19-Aug-10
93168_09
400
350
300
250
200
150
100
50
0
Fig. 9 - Typical Reverse Recovery Time vs. dI
100
I
F
= 8 A, T
J
dI
= 25 °C
F
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
/dt (A/μs)
I
F
For technical questions within your region, please contact one of the following:
= 8 A, T
(1) dI
(2) I
(3) t
0
from zero crossing point of negative
going I
through 0.75 I
extrapolated to zero current.
RRM
through zero crossing
rr
I
F
F
- reverse recovery time measured
/dt - rate of change of current
VS-8E2TL06-E, VS-8E2TL06-M, VS-8E2TL06FP-E
J
- peak reverse recovery current
= 125 °C
F
to point where a line passing
Fig. 12 - Reverse Recovery Waveform and Definitions
Fig. 11 - Reverse Recovery Parameter Test Circuit
RRM
Ultralow V
and 0.50 I
1000
(1)
adjust
F
dI
/dt
F
/dt
dI
F
/dt
RRM
8 A FRED Pt
L = 70 μH
G
F
Ultrafast Rectifier,
t
a
(2)
V
(3)
R
= 200 V
I
RRM
t
0.01 Ω
D
rr
93168_10
S
(4) Q
(5) dI
IRFP250
and I
current during t
®
rr
(rec)M
0.75 I
- area under curve defined by t
3.0
2.5
2.0
1.5
1.0
RRM
t
D.U.T.
/dt - peak rate of change of
b
100
RRM
DiodesEurope@vishay.com
dI
0.5 I
Fig. 10 - Typical Stored Charge vs. dI
Q
(rec)M
rr
Q
=
RRM
I
b
rr
F
/dt
portion of t
t
= 8 A, T
I
(4)
rr
F
x I
= 8 A, T
(5)
2
RRM
Vishay Semiconductors
J
dI
= 125 °C
J
rr
F
= 25 °C
/dt (A/μs)
rr
www.vishay.com
F
/dt
1000
5

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