VS-8E2TX06-M Vishay, VS-8E2TX06-M Datasheet - Page 5

• Manufacturer Part Number: VS-8E2TX06-M
• Description: Rectifiers 8A 600V Hyperfast 16nsTO-220AC Ha Free
• Manufacturer: Vishay

Specifications of VS-8E2TX06-M

• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 600 V
• Forward Voltage Drop: 1 V
• Recovery Time: 255 ns
• Forward Continuous Current: 16 A
• Max Surge Current: 125 A
• Reverse Current Ir: 10 uA
• Mounting Style: Through Hole
• Package / Case: TO-220AC
• Diode Type: Fast Recovery
• Repetitive Reverse Voltage Vrrm Max: 600V
• Forward Current If(av): 8A
• Forward Voltage Vf Max: 3.2V
• Reverse Recovery Time Trr Max: 23ns
• Forward Surge Current Ifsm Max: 77A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document Number: 93171
Revision: 18-Aug-10
93171_09
40
30
20
10
Fig. 9 - Typical Reverse Recovery Time vs. dI
100
dI
I
F
F
[e-mail], [e-mail],
= 8 A, T
/dt (A/μs)
I
For technical questions within your region, please contact one of the following:
F
(1) dI
(2) I
(3) t
0
= 8 A, T
from zero crossing point of negative
going I
through 0.75 I
extrapolated to zero current.
RRM
through zero crossing
rr
I
J
F
F
VS-8E2TX06-E, VS-8E2TX06-M, VS-8E2TX06FP-E
- reverse recovery time measured
= 25 °C
/dt - rate of change of current
- peak reverse recovery current
J
= 125 °C
F
to point where a line passing
Fig. 12 - Reverse Recovery Waveform and Definitions
Fig. 11 - Reverse Recovery Parameter Test Circuit
Hyperfast Rectifier, 8 A FRED Pt
RRM
and 0.50 I
1000
(1)
adjust
F
dI
/dt
F
/dt
dI
F
/dt
RRM
L = 70 μH
G
t
a
(2)
V
(3)
R
= 200 V
I
RRM
t
0.01 Ω
D
rr
93171_10
S
(4) Q
(5) dI
IRFP250
and I
current during t
rr
(rec)M
0.75 I
- area under curve defined by t
40
35
30
25
20
15
10
RRM
t
D.U.T.
/dt - peak rate of change of
b
100
RRM
[e-mail]
dI
0.5 I
Fig. 10 - Typical Stored Charge vs. dI
Q
(rec)M
rr
Q
=
RRM
b
rr
/dt
portion of t
t
(4)
rr
®
x I
(5)
2
RRM
Vishay Semiconductors
I
dI
F
rr
= 8 A, T
F
/dt (A/μs)
I
F
= 8 A, T
rr
J
= 25 °C
J
= 125 °C
www.vishay.com
F
/dt
1000
5