BYW36-TR Vishay, BYW36-TR Datasheet - Page 2

Rectifiers 2.0 Amp 600 Volt 50 Amp IFSM

BYW36-TR

Manufacturer Part Number
BYW36-TR
Description
Rectifiers 2.0 Amp 600 Volt 50 Amp IFSM
Manufacturer
Vishay
Datasheet

Specifications of BYW36-TR

Product
Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
600 V
Forward Voltage Drop
1.1 V at 1 A
Recovery Time
200 ns
Forward Continuous Current
2 A
Max Surge Current
50 A
Reverse Current Ir
5 uA
Mounting Style
Through Hole
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Package / Case
SOD-57
Repetitive Reverse Voltage Vrrm Max
600V
Forward Current If(av)
2A
Forward Voltage Vf Max
1.1V
Reverse Recovery Time Trr Max
200ns
Forward Surge Current Ifsm Max
50A
Diode Type
Fast Recovery
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BYW36-TR
Manufacturer:
Vishay Semiconductors
Quantity:
240
BYW32, BYW33, BYW34, BYW35, BYW36
Vishay Semiconductors
TYPICAL CHARACTERISTICS (T
www.vishay.com
2
ELECTRICAL CHARACTERISTICS (T
PARAMETER
Forward voltage
Reverse current
Reverse recovery time
Fig. 1 - Max. Thermal Resistance vs. Lead Length
16345
Fig. 2 - Forward Current vs. Forward Voltage
0.001
120
100
0.01
949552
100
80
60
40
20
0.1
10
0
1
0
0
T
0.5
j
5
= 175 °C
V
F
l - Lead Length (mm)
- Forward Voltage (V)
10
1.0
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
For technical questions within your region, please contact one of the following:
T
15
j
1.5
= 25 °C
I
F
= 0.5 A, I
T
V
l
L
20
2.0
= constant
R
TEST CONDITION
= V
amb
Fast Avalanche Sinterglass Diode
V
25
2.5
RRM
l
R
I
R
F
= 25 °C, unless otherwise specified)
= 1 A, i
= V
= 1 A
, T
amb
RRM
30
3.0
j
= 150 °C
R
= 25 °C, unless otherwise specified)
= 0.25 A
PART
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
Fig. 4 - Reverse Current vs. Junction Temperature (°C)
SYMBOL
16346
16347
DiodesEurope@vishay.com
1000
100
2.5
2.0
1.5
1.0
0.5
V
t
10
I
I
R
R
rr
0
F
1
25
0
V
PCB: d = 25 mm
R
R
20
thJA
T
= V
amb
50
T
j
= 100 K/W
RRM
MIN.
40
- Junction Temperature (°C)
- Ambient Temperature (°C)
-
-
-
-
60
75
80 100 120 140 160 180
100
TYP.
0.95
60
1
-
R
thJA
125
I = 10 mm
Document Number: 86048
half sinewave
= 45 K/W
V
R
= V
MAX.
150
150
200
1.1
Rev. 1.7, 30-Jul-10
RRM
5
175
UNIT
μA
μA
ns
V

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