BYV27-100-TR Vishay, BYV27-100-TR Datasheet - Page 2

• Manufacturer Part Number: BYV27-100-TR
• Description: Rectifiers 2.0 Amp 100 Volt 50 Amp IFSM
• Manufacturer: Vishay

Specifications of BYV27-100-TR

• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 100 V
• Forward Voltage Drop: 1.07 V at 3 A
• Recovery Time: 25 ns
• Forward Continuous Current: 2 A
• Max Surge Current: 50 A
• Reverse Current Ir: 1 uA
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 55 C
• Package / Case: SOD-57
• Repetitive Reverse Voltage Vrrm Max: 100V
• Forward Current If(av): 2A
• Forward Voltage Vf Max: 1.07V
• Reverse Recovery Time Trr Max: 25ns
• Forward Surge Current Ifsm Max: 50A
• Diode Type: Fast Recovery
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS (T
Document Number: 86042
Rev. 1.7, 25-Aug-10
MAXIMUM THERMAL RESISTANCE (T
PARAMETER
Junction ambient
ELECTRICAL CHARACTERISTICS (T
PARAMETER
Forward voltage
Reverse current
Reverse recovery time
Fig. 1 - Typ. Thermal Resistance vs. Lead Length
16382
Fig. 2 - Forward Current vs. Forward Voltage
0.001
949526
0.01
120
100
100
0.1
80
60
40
20
10
0
1
0.0
0
T
j
= 175 °C
5
T
0.5
L
l
V
= constant
F
l - Lead Length (mm)
- Forward Voltage (V)
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10
For technical questions within your region, please contact one of the following:
1.0
l
T
j
15
= 25 °C
I
F
1.5
= 0.5 A, I
V
On PC board with spacing 25 mm
20
I
R
TEST CONDITION
F
BYV27-50, BYV27-100, BYV27-150, BYV27-200
= V
amb
= 3 A, T
l = 10 mm, T
Ultra-Fast Avalanche Sinterglass
2.0
V
RRM
25
R
R
TEST CONDITION
I
F
= 25 °C, unless otherwise specified)
V
= 1 A, i
= V
= 3A
RSM
, T
j
amb
= 175 °C
RRM
j
2.5
30
= 165 °C
amb
R
= 25 °C, unless otherwise specified)
L
= 0.25 A
= constant
= 25 °C, unless otherwise specified)
Diode
PART
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
SYMBOL
Fig. 4 - Reverse Current vs. Junction Temperature
SYMBOL
16383
16384
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R
R
1000
thJA
thJA
100
V
V
2.5
2.0
1.5
1.0
0.5
0.0
I
I
I
t
10
R
R
R
rr
F
F
1
25
0
R
PCB: d = 25 mm
thJA
V
20
R
T
= 100 K/W
= V
amb
50
T
MIN.
j
40
RRM
- Junction Temperature (°C)
-
-
-
-
-
-
Vishay Semiconductors
- Ambient Temperature (°C)
60
75
VALUE
80 100 120 140 160 180
100
45
100
TYP.
-
-
-
-
-
-
V
half sine wave
R
l = 10 mm
125
R
thJA
= V
= 45 K/W
RRM
MAX.
150
1.07
0.88
100
150
25
1
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175
UNIT
K/W
K/W
UNIT
μA
μA
μA
ns
V
V
67