BAR64V-05-GS08 Vishay, BAR64V-05-GS08 Datasheet

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BAR64V-05-GS08

Manufacturer Part Number
BAR64V-05-GS08
Description
PIN Diodes 100 Volt 100mA 50nA IR @ 50V
Manufacturer
Vishay
Datasheet

Specifications of BAR64V-05-GS08

Configuration
Dual Common Cathode
Reverse Voltage
100 V
Forward Continuous Current
100 mA
Frequency Range
SHF
Carrier Life
1.8 us
Forward Voltage Drop
1.1 V at 50 mA
Maximum Diode Capacitance
0.35 pF at 20 V
Maximum Operating Temperature
+ 150 C
Maximum Series Resistance @ Maximum If
1.35 Ohms at 100 mA
Maximum Series Resistance @ Minimum If
20 Ohms at 1 mA
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Package / Case
SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
RF PIN Diodes - Dual, Common Cathode in SOT-23
Description
Characterized by low reverse Capacitance the PIN
Diodes BAR64V-05 was designed for RF signal
switching and tuning. As a function of the forward
bias current the forward resistance (rf) can be
adjusted over a wide range. A long carrier life time
offers low signal distortion for signals over 10 MHz up
to 3 GHz. Typical applications for this PIN Diodes are
switches and attenuators in wireless, mobile and TV-
systems.
Features
Applications
For frequency up to 3 GHz
RF-signal tuning
Signal attenuator and switches
Mobile , wireless and TV-Applications
Parts Table
Absolute Maximum Ratings
T
Electrical Characteristics
T
Document Number 85695
Rev. 1.2, 26-Apr-04
VISHAY
• High reverse Voltage
• Small reverse capacitance
• High breakdown voltage
BAR64V-05
Reverse voltage
Forward current
Junction temperature
Storage temperature range
Reverse voltage
Reverse current
Forward voltage
amb
amb
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
Part
Parameter
Parameter
BAR64V-05-GS18 or BAR64V-05-GS08
I
V
I
R
F
R
= 50 mA
= 10 µA
= 50 V
Test condition
Test condition
Ordering code
Mechanical Data
Case: Plastic case (SOT-23)
Weight: approx. 8.1 mg
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Symbol
V
V
I
R
R
F
Symbol
T
V
3
I
T
stg
F
R
j
D5
2
Min
100
Marking
1
- 55 to + 150
Vishay Semiconductors
Value
Typ.
100
100
150
1
BAR64V-05
3
Tape and Reel
Max
1.1
50
2
Remarks
www.vishay.com
18257
Unit
mA
°C
°C
V
Unit
nA
V
V
1

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BAR64V-05-GS08 Summary of contents

Page 1

... High breakdown voltage Applications For frequency GHz RF-signal tuning Signal attenuator and switches Mobile , wireless and TV-Applications Parts Table Part BAR64V-05 BAR64V-05-GS18 or BAR64V-05-GS08 Absolute Maximum Ratings °C, unless otherwise specified amb Parameter Reverse voltage Forward current Junction temperature Storage temperature range ...

Page 2

... BAR64V-05 Vishay Semiconductors Parameter Diode capacitance MHz MHz MHz, V Forward resistance f = 100 MHz 100 MHz 100 MHz, I Charge carrier life time mA Typical Characteristics (T 100 100 MHz 10.0 1.0 0.1 0.1 1 Forward Current ( mA ) 18342 F Fig. 1 Forward Resistance vs. Forward Current 0. MHz 0.45 0.40 ...

Page 3

... Document Number 85695 Rev. 1.2, 26-Apr-04 3500 Mounting Pad Layout 2.0 (0.079) 0.95 (0.037) 2.6 (.102) 2.4 (.094) BAR64V-05 Vishay Semiconductors 0.8 (0.031) 0.9 (0.035) 0.95 (0.037) ISO Method A 17418 www.vishay.com 3 ...

Page 4

... BAR64V-05 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment ...

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