IXGA12N120A3 IXYS, IXGA12N120A3 Datasheet

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IXGA12N120A3

Manufacturer Part Number
IXGA12N120A3
Description
IGBT Transistors 1200V, 12A IGBT; G Series
Manufacturer
IXYS
Datasheet

Specifications of IXGA12N120A3

Vces, (v)
1200
Ic25, Tc=25°c, Igbt, (a)
22
Ic90, Tc=90°c, Igbt, (a)
12
Vce(sat), Max, Tj=25°c, Igbt, (v)
3
Rthjc, Max, Igbt, (°c/w)
1.25
Package Style
TO-263
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
GenX3
IGBTs
High Surge Current
Ultra-Low Vsat PT IGBTs for
up to 3kHz Switching
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
T
T
F
M
Weight
Symbol
(T
BV
V
I
I
V
© 2010 IXYS CORPORATION, All Rights Reserved
C25
C90
CM
CES
GES
J
JM
stg
L
SOLD
C
CES
CGR
GES
GEM
C
GE(th)
CE(sat)
d
J
CES
= 25°C, Unless Otherwise Specified
TM
Clamped Inductive Load
Test Conditions
T
T
Continuous
Transient
T
T
T
V
T
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Force (TO-263)
Mounting Torque (TO-220 & TO-247)
TO-263
TO-220
TO-247
Test Conditions
I
I
V
V
I
C
C
C
J
J
C
C
C
C
GE
CE
CE
1200V
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 90°C
= 25°C, 1ms
= 25°C
= 15V, T
= 250μA, V
= 250μA, V
= V
= 0V, V
= I
C90
CES
, V
, V
GE
GE
VJ
GE
= ±20V
= 125°C, R
= 15V, Note 1
= 0V
GE
CE
= 0V
= V
GE
GE
= 1MΩ
G
= 10Ω
T
T
J
J
= 125°C
= 125°C
IXGA12N120A3
IXGH12N120A3
IXGP12N120A3
10..65 / 2.2..14.6
1200
V
Min.
2.5
Characteristic Values
CE
-55 ... +150
-55 ... +150
Maximum Ratings
0.8
1.13 / 10
I
CM
Typ.
2.40
2.75
1200
1200
= 24
V
±20
±30
100
150
300
260
2.5
3.0
6.0
22
12
60
CES
Max.
±100
Nm/lb.in.
275
5.0
3.0
10
N/lb.
μA
μA
nA
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
A
V
V
V
V
g
g
g
V
I
V
TO-263 AA (IXGA)
TO-220AB (IXGP)
TO-247 (IXGH)
G = Gate
S = Source
Features
Advantages
Applications
C90
Optimized for Low Conduction Losses
International Standard Packages
High Power Density
Low Gate Drive Requirement
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
Inrush Current Protection Circuits
CES
CE(sat)
G
G
D
D S
= 1200V
= 12A
≤ ≤ ≤ ≤ ≤ 3.0V
S
G
S
D
Tab = Drain
D (Tab)
D (Tab)
D (Tab)
= Drain
DS100212B(11/10)

Related parts for IXGA12N120A3

IXGA12N120A3 Summary of contents

Page 1

... V GE(th CES CE CES GE = ±20V 0V, V GES 15V, Note 1 CE(sat) C C90 GE © 2010 IXYS CORPORATION, All Rights Reserved IXGA12N120A3 IXGP12N120A3 IXGH12N120A3 Maximum Ratings 1200 = 1MΩ 1200 GE ±20 ± 10Ω ≤ • CES 100 -55 ... +150 150 -55 ... +150 300 260 10..65 / 2.2..14.6 1 ...

Page 2

... Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXGA12N120A3 IXGP12N120A3 IXGH12N120A3 Max. TO-263 Outline Gate 2 = Collector Emitter 4 = Collector 1.25 °C/W °C/W °C/W ...

Page 3

... J = 15V 13V 11V 10V 2.5 3.0 3.5 4.0 4.5 = 125º 3.5 4.0 4.5 5.0 5.5 6 25º IXGA12N120A3 IXGP12N120A3 IXGH12N120A3 Fig. 2. Extended Output Characteristics @ Volts CE Fig. 4. Dependence of V Junction Temperature 1 15V I GE 1.6 1.4 1.2 1.0 0.8 0.6 -50 - ...

Page 4

... IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 125º 1,000 100 800 900 1000 1100 1200 Fig. 11. Maximum Transient Thermal Impedance Fig. 11. Maximum Transient Thermal Impedance aaaaaa 0.001 Pulse Width - Second IXGA12N120A3 IXGP12N120A3 Fig. 8. Gate Charge 600V 12A 10mA ...

Page 5

... V = 15V 960V 1600 80 1500 70 1400 60 1300 50 1200 40 30 1100 IXGA12N120A3 IXGP12N120A3 IXGH12N120A3 Fig. 13. Resistive Turn-on Rise Time vs. Collector Current R = 10Ω 15V 960V 125º 25º Amperes C Fig. 15. Resistive Turn-off Switching Times vs. Junction Temperature t ...

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