50MT060ULSTAPBF Vishay, 50MT060ULSTAPBF Datasheet - Page 5

IGBT Transistors 600 Volt 100 Amp Low Side Chopper

50MT060ULSTAPBF

Manufacturer Part Number
50MT060ULSTAPBF
Description
IGBT Transistors 600 Volt 100 Amp Low Side Chopper
Manufacturer
Vishay
Datasheet

Specifications of 50MT060ULSTAPBF

Package / Case
MTP-14
Configuration
Single
Collector- Emitter Voltage Vceo Max
600 V
Maximum Gate Emitter Voltage
+/- 20 V
Continuous Collector Current At 25 C
100 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Power Dissipation Pd
445W
Collector Emitter Voltage V(br)ceo
600V
Continuous Collector Current Ic
100A
Leaded Process Compatible
Yes
Collector Emitter Saturation Voltage Vce(sat)
2.55V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Document Number: 94540
Revision: 01-Mar-10
Fig. 8 - Typical Capacitance vs. Collector to Emitter Voltage
Fig. 9 - Typical Gate Charge vs. Gate to Emitter Voltage
14000
12000
10000
8000
6000
4000
2000
20.0
16.0
12.0
8.0
4.0
0.0
0
0
1
I C = 100A
V CE = 480V
Cies
Coes
Cres
0.0001
V DS , Drain-to-Source Voltage (V)
0.001
0.01
0.1
Q G, Total Gate Charge (nC)
100
1
1E-006
10
D = 0.50
0.01
V GE = 0V, f = 1 MHZ
C
C res = C gc
C
0.02
0.05
0.20
0.10
oes
ies
200
Fig. 7 - Maximum Transient Thermal Impedance, Junction to Case (Diode)
= C
= C
ce
ge
+ C
+C
1E-005
100
SINGLE PULSE
( THERMAL RESPONSE )
gc
gc
For technical questions, contact:
, C
"Low Side Chopper" IGBT MTP
300
ce
(Ultrafast Speed IGBT), 100 A
SHORTED
1000
400
0.0001
t 1 , Rectangular Pulse Duration (sec)
0.001
indmodules@vishay.com
τ
Fig. 11 - Typical Switching Losses vs. Junction Temperature
J
?
J
τ
1
Ci= τi/Ri
?
1
Ci
Fig. 10 - Typical Switching Losses vs. Gate Resistance
i?Ri
R
100
0.1
1
5.0
4.0
3.0
2.0
1.0
0.0
R
10
0.01
1
1
-60 -40 -20
τ
2
0
R
?
2
2
R
V CC = 480V
V GE = 15V
T J = 25°C
I C = 100A
R G = 5.0Ω
V GE = 15V
V CC = 480V
2
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Vishay High Power Products
R
τ
3
3
R
?
3
3
T J , Junction Temperature (°C)
τ
C
R g , Gate Resistance ( Ω )
?
Ri (°C/W)
50MT060ULSTAPbF
0
0.200
0.296
0.102
0.1
10
20
40
0.038934
0.52648
τi (sec)
0.000993
60
80 100 120 140 160
20
E OFF
1
I C = 25A
I C = 50A
I C = 100A
E ON
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