IXGF25N250 IXYS, IXGF25N250 Datasheet

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IXGF25N250

Manufacturer Part Number
IXGF25N250
Description
IGBT Transistors I4-Pak
Manufacturer
IXYS
Datasheet

Specifications of IXGF25N250

Configuration
Single
Collector- Emitter Voltage Vceo Max
2500 V
Maximum Gate Emitter Voltage
+/- 20 V
Maximum Operating Temperature
+ 150 C
Package / Case
ISOPLUS I4-PAC-3
Continuous Collector Current Ic Max
30 A
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Vces, (v)
2500
Ic25, Tc=25°c, Igbt, (a)
30
Ic110, Tc=110°c, Igbt, (a)
15
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.9
Tfi, Typ, Igbt, (ns)
-
Eoff, Typ, Tj=125°c, Igbt, (mj)
-
Rthjc, Max, Igbt, (k/w)
1.1
Package Style
ISOPLUS i4-Pak
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
High Voltage IGBT
For Capacitor Discharge
Applications
( Electrically Isolated Tab)
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
T
T
F
V
Weight
Symbol
(T
BV
V
I
I
V
© 2009 IXYS CORPORATION, All Rights Reserved
C25
C110
CM
CES
GES
J
JM
stg
L
SOLD
C
CES
CGR
GES
GEM
C
ISOL
GE(th)
CE(sat)
J
CES
= 25°C, Unless Otherwise Specified)
Clamped Inductive Load
Test Conditions
T
T
Continuous
Transient
T
T
T
V
T
1.6 mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Force
50/60Hz, 1 minute
Test Conditions
I
I
V
V
I
I
C
C
C
C
J
J
C
C
C
C
GE
CE
CE
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 110°C
= 25°C, V
= 20V, T
= 25°C
= 250µA, V
= 250µA, V
= 0.8 • V
= 0V, V
= 25A, V
= 75A
VJ
GE
GE
CES
GE
= 125°C, R
= ±20V
= 20V, 1ms
= 15V, Note 1
GE
CE
, V
= 0V
= V
GE
= 0V, Note 2
GE
GE
= 1MΩ
G
= 20Ω
T
J
= 125°C
IXGF25N250
20..120/4.5..27
2500
Min.
-55 ... +150
-55 ... +150
Characteristic Values
3.0
Maximum Ratings
I
0.5 • V
CM
= 240
2500
2500
2500
± 30
± 20
300
260
200
114
150
Typ.
30
15
CES
5
±100
5.0
2.9
5.2
Nm/lbin.
50
Max.
1 mA
V~
µA
nA
°C
°C
°C
°C
°C
W
V
V
V
V
V
A
A
A
A
V
V
V
g
V
I
V
ISOPLUS i4-Pak
1 = Gate
2 = Emitter
Features
Applications
Advantages
C25
UL Recognized Package
Electrically Isolated Tab
High Peak Current Capability
Low Saturation Voltage
MOS Gate Turn-On
- Drive Simplicity
Rugged NPT Structure
Molding Epoxies Meet UL 94 V-0
Flammability Classification
Capacitor Discharge
Pulser Circuits
High Power Density
Easy to Mount
CES
CE(sat)
1
2
5
≤ ≤ ≤ ≤ ≤ 2.9V
= 30A
= 2500V
5 = Collector
TM
ISOLATED TAB
DS99829B(05/09)

Related parts for IXGF25N250

IXGF25N250 Summary of contents

Page 1

... 0V, Note 2 CES CE CES 0V ±20V GES 25A 15V, Note 1 CE(sat 75A C © 2009 IXYS CORPORATION, All Rights Reserved IXGF25N250 Maximum Ratings 2500 = 1MΩ 2500 GE ± 20 ± 200 = 20Ω 240 G CM 0.5 • V CES 114 -55 ... +150 150 -55 ... +150 300 260 20..120/4.5..27 ...

Page 2

... CES 30 68 233 209 200 0.15 30 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXGF25N250 ISOPLUS i4-Pak TM Max 1.10 °C/W °C/W °C/W 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 6,583,505 6,710,463 6,771,478 B2 7,071,537 ...

Page 3

... V = 15V 180 GE 160 140 I = 150A 120 C 100 100A 50A IXGF25N250 Fig. 2. Extended Output Characteristics @ 25º 25V GE 20V 15V 10V Volts CE Fig. 4. Dependence of V Junction Temperature V = 15V 150A C -50 - Degrees Centigrade J Fig. 6. Input Admittance 40ºC ...

Page 4

... IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions 120 140 160 180 200 10000 1000 100 10 1500 1750 2000 2250 2500 Fig. 11. Maximum Transient Thermal Impedance 0.01 Pulse Width - Seconds IXGF25N250 Fig. 8. Gate Charge V = 1250V 50A NanoCoulombs G Fig ...

Page 5

... T = 25ºC J 150 225 135 220 215 120 210 105 205 90 200 110 120 130 140 150 IXGF25N250 Fig. 13. Resistive Turn-on Rise Time vs. Collector Current R = 5Ω 125º 15V 1250V 100 110 I - Amperes C Fig ...

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