MWI300-12E9 IXYS, MWI300-12E9 Datasheet - Page 2

• Manufacturer Part Number: MWI300-12E9
• Description: Discrete Semiconductor Modules 300 Amps 1200V
• Manufacturer: IXYS
• Type: Six-Pack IGBT Modulesr

Specifications of MWI300-12E9

• Product: Power Semiconductor Modules
• Mounting Style: Screw
• Package / Case: E+
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
Diodes
Symbol
I
I
I
Symbol
V
I
R
Symbol
R
B
Module
Symbol
T
T
T
V
M
Symbol
R
d
d
R
Weight
*
Temperature Sensor NTC
RM
F80
FRM
2
)
A
t
F
VJ
JM
stg
S
thJC
25
25/50
ISO
therm-chip
thCH
d
V = V
CEsat
*
)
+ 2x R
Conditions
T
t
T
Conditions
I
I
T
Conditions
T = 25°C
Conditions
operating
I
Mounting torque (M5)
Terminal connection torque (M6)
Conditions
Resistance terminal to chip
Creepage distance on surface
Strike distance in air
with heatsink compound
F
F
p
ISOL
VJ
C
VJ
=  ms
= 300 A; V
= 300 A; di
= 80°C
= 25°C; V
= 25°C; t = 0 ms; V
<  mA; 50/60 Hz
therm-chip
·I
C
GE
F
resp. V = V
/dt = 2700 A/µs;
R
= 0 V; T
= 800 V
VJ
F
+ 2x R·I
= 25°C
R
= 0 V
(T
F
VJ
= 25°C, unless otherwise specified)
2.7
0
min.
min.
min.
4.75
Characteristic Values
Characteristic Values
Characteristic Values
0.55
0.0
900
3375
Maximum Ratings
0.
typ.
typ.
typ.
240
Maximum Ratings
5.0
-40...+25
-40...+25
2400
max.
max.
+50
3400
max.
3 - 6
3 - 6
5.25
300
600
2
K/W
K/W
mm
mm
mΩ
Nm
Nm
A
kΩ
V~
°C
°C
°C
2
A
A
V
A
K
g
s
MWI 300-12 E9
2 - 5