BAV70T Micro Commercial Components (MCC), BAV70T Datasheet
BAV70T
Manufacturer Part Number
BAV70T
Description
Diodes (General Purpose, Power, Switching) 100V
Manufacturer
Micro Commercial Components (MCC)
Specifications of BAV70T
Product
Switching Diodes
Peak Reverse Voltage
75 V
Forward Continuous Current
0.15 A
Max Surge Current
1 A
Configuration
Dual Common Cathode
Recovery Time
4 ns
Forward Voltage Drop
0.855 V
Maximum Reverse Leakage Current
2.5 uA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Package / Case
SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BAV70T
Manufacturer:
INFINEON
Quantity:
6 000
Part Number:
BAV70T
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Company:
Part Number:
BAV70T-7-F
Manufacturer:
Diodes Inc
Quantity:
29 136
Part Number:
BAV70T-7-F
Manufacturer:
DIODES/美台
Quantity:
20 000
Part Number:
BAV70T/DG
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Company:
Part Number:
BAV70T/R
Manufacturer:
PANJIT
Quantity:
3 226
Company:
Part Number:
BAV70T116
Manufacturer:
ROHM
Quantity:
16 523
Company:
Part Number:
BAV70TA
Manufacturer:
ZETEX
Quantity:
157
Part Number:
BAV70TT1G
Manufacturer:
ON/安森美
Quantity:
20 000
Revision: A
Electrical Characteristics @ 25 C Unless Otherwise Specified
Features
Maximum Ratings
Peak Repetitive
Reverse Voltage
Continuous
Forward Current
Power Dissipation
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
Typical Total
Capacitance
Reverse Recovery
Time
Micro Commercial Components
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Ultra-Small Surface Mount Package
For General Purpose Switching Applications
High Conductance
M C C
Operating Temperature: -55 C to +150 C
Storage Temperature: -55 C to +150 C
Marking : A2
BAS16T
@t=1.0us
@t=1.0ms
@t=1.0s
Marking : JD
BAW56T
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Marking : JJ
1000mV
1250mV
150mW
BAV70T
715mV
855mV
0.03 A
75mA
1.5pF
4.0A
1.0A
0.5A
85V
2 A
4nS
I
I
I
I
V
V
Measured at
1.0MHz, V
IF = IR = 10mA,
Irr = 0.1 x IR,
RL = 100
F
F
F
F
R
R
= 1mA
= 10mA;
= 50mA
= 150mA
=75Volts
=25Volts
Marking : JE
BAV99T
1 of 3
R
=0V
G
DIM
A
B
C
D
E
G
H
K
J
Switching Diode
K
150mW 85Volt
.000
.059
.030
.057
.035
.028
.004
.010
MIN
.020 Nominal
A
E
INCHES
BAS16T
SOT-523
BAW56T
BAV70T
BAV99T
D
MAX
.067
.033
.069
.043
.004
.031
.008
.014
DIMENSIONS
H
B
C
0.50Nominal
.000
1.50
0.75
1.45
0.90
.100
MIN
.70
.25
J
MM
.100
MAX
1.70
0.85
1.75
1.10
0.80
.200
.35
2011/01/01
NOTE
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