M1MA152WKT1 ON Semiconductor, M1MA152WKT1 Datasheet - Page 2

• Manufacturer Part Number: M1MA152WKT1
• Description: Diodes (General Purpose, Power, Switching) 80V 100mA
• Manufacturer: ON Semiconductor

Specifications of M1MA152WKT1

• Product: Switching Diodes
• Peak Reverse Voltage: 80 V
• Forward Continuous Current: 0.34 A
• Max Surge Current: 0.75 A
• Configuration: Dual Common Cathode
• Recovery Time: 3 ns
• Forward Voltage Drop: 1.2 V
• Maximum Reverse Leakage Current: 0.1 uA
• Maximum Power Dissipation: 0.2 W
• Operating Temperature Range: + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Package / Case: SC-59-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

2. t
ELECTRICAL CHARACTERISTICS
RECOVERY TIME EQUIVALENT TEST CIRCUIT
Reverse Voltage Leakage Current
Forward Voltage
Reverse Breakdown Voltage
Diode Capacitance
Reverse Recovery Time (Figure 1)
rr
Test Circuit
Characteristic
A
Figure 1. Reverse Recovery Time Equivalent Test Circuit
(T
M1MA151WKT1, M1MA152WKT1
A
= 25°C)
M1MA151WKT1
M1MA152WKT1
M1MA151WKT1
M1MA152WKT1
R
L
http://onsemi.com
2
Symbol
(Note 2)
V
C
V
I
t
R
rr
R
F
D
V
R
INPUT PULSE
t
r
I
R
F
10%
V
L
t
t
= 10 mA, V
90%
p
r
R
= 100 W, I
= 0.35 ns
= 2 ms
= 0, f = 1.0 MHz
I
I
F
Condition
R
V
V
t
p
= 100 mA
R
R
= 100 mA
= 35 V
= 75 V
rr
R
= 0.1 I
= 6.0 V,
t
R
Min
40
80
−
−
−
−
OUTPUT PULSE
I
F
I
V
R
F
Max
0.1
1.2
2.0
3.0
R
L
−
= 10 mA
= 100 W
= 6 V
t
rr
I
rr
= 0.1 I
mAdc
Unit
Vdc
Vdc
pF
ns
R
t