BZD27C5V6P-GS08 Vishay, BZD27C5V6P-GS08 Datasheet

DIODE ZENER DO-219AB

BZD27C5V6P-GS08

Manufacturer Part Number
BZD27C5V6P-GS08
Description
DIODE ZENER DO-219AB
Manufacturer
Vishay
Datasheets

Specifications of BZD27C5V6P-GS08

Voltage - Zener (nom) (vz)
5.6V
Voltage - Forward (vf) (max) @ If
1.2V @ 200mA
Current - Reverse Leakage @ Vr
10µA @ 2V
Power - Max
800mW
Impedance (max) (zzt)
4 Ohm
Mounting Type
Surface Mount
Package / Case
DO-219AB
Zener Voltage
5.6 V
Voltage Tolerance
5 %
Voltage Temperature Coefficient
0.04 % / C
Power Dissipation
800 mW
Maximum Reverse Leakage Current
10 uA
Maximum Zener Impedance
4 Ohms
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Zener Voltage Vz Typ
5.6V
Power Dissipation Pd
800mW
Diode Case Style
DO-219AB
No. Of Pins
2
Repetitive Reverse Current
10µA
Zener Voltage Vz Max
6V
Repetitive Reverse Voltage Vrrm Max
2V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Tolerance
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BZD27C5V6P-GS08
Manufacturer:
VISHAY
Quantity:
2 659
Zener Diodes with Surge Current Specification
Features
Mechanical Data
Case: JEDEC DO-219AB (SMF
Weight: approx. 15 mg
Absolute Maximum Ratings
T
1)
2)
Thermal Characteristics
T
1)
Electrical Characteristics
T
Document Number 85810
Rev. 1.8, 13-Apr-05
• Sillicon Planar Zener Diodes
• Low profile surface-mount package
• Zener and surge current specification
• Low leakage current
• Excellent stability
• High temperature soldering:
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
Power dissipation
Non-repetitive peak pulse power
dissipation
Thermal resistance junction to ambient air
Thermal resistance junction to lead
Maximum junction temperature
Storage temperature range
Forward voltage
amb
amb
amb
Mounted on epoxy-glass PCB with 3 x 3 mm Cu pads (≥ 40 µm thick)
T
Mounted on epoxy-glass PCB with 3 x 3 mm Cu pads (≥ 40 µm thick)
J
260 °C/10 sec. at terminals
and WEEE 2002/96/EC
= 25 °C prior to surge
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
Parameter
Parameter
Parameter
T
T
100 µs square pulse
10/1000 µs waveform (BZD27-
C7V5P to BZD27-C100P)
10/1000 µs waveform (BZD27-
C110P to BZD27-C200P)
I
F
L
A
= 0.2 A
= 80 °C
= 25 °C
®
) Plastic case
1)
Test condition
Test condition
Test condition
2)
BZD27C3V6P to BZD27C200P
2)
2)
e3
Packaging codes/options:
GS18 / 10 k per 13 " reel, (8 mm tape), 50 k/box
GS08 / 3 k per 7 " reel, (8 mm tape), 30 k/box
Symbol
V
F
Symbol
Symbol
P
P
P
R
R
P
P
RSM
RSM
T
ZSM
thJA
thJL
T
tot
tot
S
j
Min
- 55 to + 150
Vishay Semiconductors
Value
Value
0.8
Typ.
300
150
100
180
150
2.3
30
1)
Max
1.2
17249
www.vishay.com
K/W
K/W
Unit
Unit
°C
°C
W
W
W
W
W
Unit
V
1

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BZD27C5V6P-GS08 Summary of contents

Page 1

... Symbol P tot P tot 2) P ZSM P RSM 2) P RSM 2) Test condition Symbol 1) R thJA R thJL Test condition Symbol V F Vishay Semiconductors 17249 Value Unit 2 0.8 300 W 150 W 100 W Value Unit 180 K/W 30 K/W 150 ° 150 °C Min Typ. Max 1.2 www.vishay.com ...

Page 2

... BZD27C3V6P to BZD27C200P Vishay Semiconductors Electrical Characteristics When used as voltage regulator diodes (T Partnumber Marking Code BZD27C3V6P D0 BZD27C3V9P D1 BZD27C4V3P D2 BZD27C4V7P D3 BZD27C5V1P D4 BZD27C5V6P D5 BZD27C6V2P D6 BZD27C6V8P D7 BZD27C7V5P D8 BZD27C8V2P D9 BZD27C9V1P E0 BZD27C10P E1 BZD27C11P E2 BZD27C12P E3 BZD27C13P E4 BZD27C15P E5 BZD27C16P E6 BZD27C18P E7 BZD27C20P E8 BZD27C22P E9 BZD27C24P F0 BZD27C27P F1 BZD27C30P F2 BZD27C33P F3 BZD27C36P F4 BZD27C39P F5 BZD27C43P ...

Page 3

... Vishay Semiconductors Clamping Voltage Reverse Current at Stand-Off Voltage RSM µ max max 11.3 13.3 1500 12.3 12.2 1200 13.3 11.3 100 14.8 10 ...

Page 4

... BZD27C3V6P to BZD27C200P Vishay Semiconductors Typical Characteristics (Tamb = 25 °C unless otherwise specified) 10.00 Typ. V Max 1.00 0.10 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 17411 V – Forward Voltage ( Figure 1. Forward Current vs. Forward Voltage 10000 C5V1P C6V8P C12P C18P ...

Page 5

... Rev. 1.8, 13-Apr-05 BZD27C3V6P to BZD27C200P 0.85 (0.033) 0.35 (0.014) 3.9 (0.152) 3.5 (0.137) 0.99 (0.039) 0.97 (0.038) Z Cathode Band Top View 2.9 (0.113) 2.7 (0.105) Mounting Pad Layout 1.6 (0.062) 1.3 (0.051) Vishay Semiconductors 0.16 (0.006) 1.2 (0.047) 0.8 (0.031) 1.4 (0.055) www.vishay.com 5 ...

Page 6

... BZD27C3V6P to BZD27C200P Vishay Semiconductors Blistertape for SMF www.vishay.com 6 Document Number 85810 Rev. 1.8, 13-Apr-05 ...

Page 7

... Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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