BZX84C4V7LT1G ON Semiconductor, BZX84C4V7LT1G Datasheet - Page 4

• Manufacturer Part Number: BZX84C4V7LT1G
• Description: DIODE ZENER 4.7V 225MW SOT-23
• Manufacturer: ON Semiconductor
• Type: Voltage Regulatorr

Specifications of BZX84C4V7LT1G

• Voltage - Zener (nom) (vz): 4.7V
• Voltage - Forward (vf) (max) @ If: 900mV @ 10mA
• Current - Reverse Leakage @ Vr: 3µA @ 2V
• Power - Max: 225mW
• Impedance (max) (zzt): 80 Ohm
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Operating Temperature: -65°C ~ 150°C
• Capacitance, Junction: 260 pF
• Current, Forward: 10 mA
• Current, Reverse: 5 mA
• Package Type: SOT-23 (TO-236)
• Power Dissipation: 225 mW
• Primary Type: Zener
• Temperature, Junction, Maximum: +150 °C
• Temperature, Operating: -65 to +150 °C
• Voltage, Forward: 0.9 V
• Voltage, Reverse: 4.7 V
• Configuration: Single
• Zener Voltage (typ): 4.7V
• Zener Test Current: 5mA
• Voltage Tolerance: 6%
• Knee Impedance: 80Ohm
• Operating Temperature Classification: Military
• Rev Curr: 3uA
• Mounting: Surface Mount
• Pin Count: 3
• Operating Temp Range: -65C to 150C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Tolerance: -
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device
• Other names: BZX84C4V7LT1GOSTR

4. Zener voltage is measured with a pulse test current I
* The “G” suffix indicates Pb-Free package available.
ELECTRICAL CHARACTERISTICS - BZX84BxxxL (Tight Tolerance Series)
(Pinout: 1‐Anode, 2‐No Connection, 3‐Cathode) (T
BZX84B4V7LT1, G
BZX84B5V1LT1, G
BZX84B5V6LT1, G
BZX84B6V2LT1, G
BZX84B6V8LT1, G
BZX84B7V5LT1, G
BZX84B8V2LT1, G
BZX84B9V1LT1, G
BZX84B12LT1, G
BZX84B15LT1, G
BZX84B16LT1, G
BZX84B18LT1, G
BZX84B22LT1, G
BZX84B24LT1, G
Device
Marking
Device
T10
T11
T12
T13
T14
T15
T16
T17
T18
T22
T19
T20
T24
T25
BZX84B4V7LT1, BZX84C2V4LT1 Series
4.61
5.00
5.49
6.08
6.66
7.35
8.04
8.92
14.7
15.7
17.6
21.6
23.5
V
11.8
Min
Z
(Volts) @ I
(Note 4)
A
Nom
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
12
15
16
18
22
24
= 25°C unless otherwise noted, V
ZT
Z
= 5 mA
at an ambient temperature of 25°C.
Max
4.79
5.20
5.71
6.32
6.94
7.65
8.36
9.28
12.2
15.3
16.3
18.4
22.4
24.5
I
Z
ZT
(Note 4)
ZT
4
Max
= 5 mA
80
60
40
10
15
15
15
15
25
30
40
45
55
70
(W) @
mA
I
R
0.05
0.05
0.05
0.05
0.05
0.7
0.5
0.1
3
2
1
3
2
1
Max Reverse
F
Leakage
Current
= 0.90 V Max. @ I
@
Volts
10.5
11.2
12.6
15.4
16.8
V
2
2
2
4
4
5
5
6
8
R
-3.5
-2.7
10.4
12.4
16.4
18.4
Min
0.4
1.2
2.5
3.2
3.8
9.2
-2
F
6
@ I
= 10 mA)
(mV/k)
ZT
q
VZ
= 5 mA
Max
0.2
1.2
2.5
3.7
4.5
5.3
6.2
10
13
14
16
20
22
7
f = 1 MHz
@ V
C (pF)
260
225
200
185
155
140
135
130
130
105
100
110
85
80
R
=0,