BZT52H-C33,115 NXP Semiconductors, BZT52H-C33,115 Datasheet - Page 7

• Manufacturer Part Number: BZT52H-C33,115
• Description: DIODE ZENER 33V 375MW SOD123F
• Manufacturer: NXP Semiconductors

Specifications of BZT52H-C33,115

• Package / Case: SOD-123 Flat Leads
• Voltage - Zener (nom) (vz): 33V
• Voltage - Forward (vf) (max) @ If: 900mV @ 10mA
• Current - Reverse Leakage @ Vr: 50nA @ 23.1V
• Tolerance: ±5%
• Power - Max: 375mW
• Impedance (max) (zzt): 40 Ohm
• Mounting Type: Surface Mount
• Operating Temperature: -65°C ~ 150°C
• Zener Voltage: 33 V
• Voltage Tolerance: 6 %
• Voltage Temperature Coefficient: 30.4 mV / K
• Power Dissipation: 830 mW
• Maximum Reverse Leakage Current: 0.05 uA
• Maximum Zener Impedance: 40 Ohms
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-3766-2; 934059415115; BZT52H-C33 T/R

NXP Semiconductors
BZT52H_SER
Product data sheet
Fig 1.
Fig 3.
(mV/K)
P
S
(W)
ZSM
(1) T
(2) T
Z
10
10
10
−1
−2
−3
0
1
10
3
2
as a function of pulse duration; maximum
values
BZT52H-B/C2V4 to BZT52H-B/C4V3
T
working current; typical values
Non-repetitive peak reverse power dissipation
0
Temperature coefficient as a function of
−1
j
j
j
= 25 °C (prior to surge)
= 150 °C (prior to surge)
= 25 °C to 150 °C
20
1
(1)
(2)
4V3
40
t
p
3V9
2V4
2V7
(ms)
3V3
I
3V6
Z
All information provided in this document is subject to legal disclaimers.
(mA)
mbg801
mbg783
3V0
Rev. 3 — 7 December 2010
10
60
Fig 2.
Fig 4.
(mV/K)
(mA)
S
I
F
Z
300
200
100
10
−5
0
5
0
0.6
T
Forward current as a function of forward
voltage; typical values
0
BZT52H-B/C4V7 to BZT52H-B/C12
T
Temperature coefficient as a function of
working current; typical values
Single Zener diodes in a SOD123F package
j
j
= 25 °C
= 25 °C to 150 °C
4
8
BZT52H series
9V1
8V2
7V5
6V8
0.8
12
11
10
12
6V2
5V6
5V1
4V7
© NXP B.V. 2010. All rights reserved.
16
I
V
Z
mbg781
mbg782
F
(mA)
(V)
20
1
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