LL4154-GS08 Vishay, LL4154-GS08 Datasheet - Page 2

Diodes (General Purpose, Power, Switching) 35 Volt 300mA 2.0 Amp IFSM

LL4154-GS08

Manufacturer Part Number
LL4154-GS08
Description
Diodes (General Purpose, Power, Switching) 35 Volt 300mA 2.0 Amp IFSM
Manufacturer
Vishay
Datasheet

Specifications of LL4154-GS08

Product
General Purpose Diodes
Peak Reverse Voltage
35 V
Forward Continuous Current
0.3 A
Max Surge Current
2 A
Configuration
Single
Recovery Time
4 ns
Forward Voltage Drop
1 V
Maximum Reverse Leakage Current
0.1 uA
Operating Temperature Range
+ 175 C
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Package / Case
MiniMELF SOD-80-2
Repetitive Reverse Voltage Vrrm Max
35V
Forward Current If(av)
150mA
Forward Voltage Vf Max
1V
Reverse Recovery Time Trr Max
4ns
Forward Surge Current Ifsm Max
2A
Diode Type
Fast Recovery
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
LL4154
Vishay Semiconductors
Electrical Characteristics
T
Typical Characteristics
Fig. 1 Reverse Current vs. Junction Temperature
Fig. 2 Forward Current vs. Forward Voltage
www.vishay.com
2
Forward voltage
Reverse current
Breakdown voltage
Diode capacitance
Reverse recovery time
amb
94 9152
94 9154
= 25 °C, unless otherwise specified
1000
0.01
100
100
0.1
0.1
10
10
1
1
0
0
Parameter
Scattering Limit
T = 100 ° C
0.4
T
40
j
j
V - Forward Voltage ( V )
- Junction Temperature ( ° C )
F
0.8
80
T = 25 ° C
j
120
1.2
I
V
V
I
V
I
I
i
R
F
R
F
F
V
R
R
R
= 30 mA
= I
= 10 mA, V
= 5 µA, t
= 0.1 x I
R
= 25 V
= 25 V, T
= 0, f = 1 MHz, V
(T
= 25 V
160
1.6
R
amb
= 10 mA, i
Test condition
p
R
= 25 °C unless otherwise specified)
/T = 0.01, t
200
, R
2.0
j
= 150 °C
R
L
= 6 V,
= 100 Ω
R
= 1mA
HF
p
= 50 mV
= 0.3 ms
Fig. 3 Diode Capacitance vs. Reverse Voltage
Symbol
V
94 9156
C
V
(BR)
I
I
t
t
R
R
rr
rr
F
D
3.0
2.5
2.0
1.5
1.0
0.5
0
0.1
Min
35
V
R
- Reverse Voltage ( V )
1
T
f = 1 MHz
j
Typ.
= 25°C
10
Document Number 85560
Max
100
100
1
4
4
2
100
Rev. 1.6, 06-Apr-04
VISHAY
Unit
µA
nA
pF
ns
ns
V
V

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