BAQ333-TR3 Vishay, BAQ333-TR3 Datasheet - Page 2

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BAQ333-TR3

Manufacturer Part Number
BAQ333-TR3
Description
Diodes (General Purpose, Power, Switching) 40 Volt 200mA 2.0 Amp IFSM
Manufacturer
Vishay
Datasheet

Specifications of BAQ333-TR3

Product
Switching Diodes
Peak Reverse Voltage
30 V
Forward Continuous Current
0.2 A
Max Surge Current
2 A
Configuration
Single
Forward Voltage Drop
1 V
Maximum Reverse Leakage Current
0.003 uA
Operating Temperature Range
+ 175 C
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Package / Case
MicroMELF-2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
BAQ333 / 334 / 335
Vishay Semiconductors
Thermal Characteristics
T
Electrical Characteristics
T
Typical Characteristics
T
www.vishay.com
2
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
Forward voltage
Reverse current
Breakdown voltage
Diode capacitance
amb
amb
amb
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
Figure 1. Reverse Current vs. Junction Temperature
94 9079
10000
1000
Parameter
100
10
1
0
Parameter
V
R
Scattering Limit
T
= V
j
4 0
- Junction Temperature (°C)
RRM
8 0
I
E ≤ 300 lx, rated V
E ≤ 300 lx, rated V
E ≤ 300 lx, V
E ≤ 300 lx, V
E ≤ 300 lx, V
I
V
F
R
R
= 100 mA
= 5 µA, t
120
= 0, f = 1 MHz
Test condition
160
p
/T = 0.01, t
mounted on epoxy-glass hard
tissue, Fig. 1
35 µm copper clad, 0.9 mm
copper area per electrode
R
R
R
= 15 V
= 60 V
= 30 V
200
R
R
, T
p
j
Test condition
= 125 °C
= 0.3 ms BAQ333
BAQ333
BAQ334
BAQ335
BAQ334
BAQ335
Part
2
94 9078
Figure 2. Forward Current vs. Forward Voltage
1000
Symbol
100
0.1
V
V
V
10
1
C
V
(BR)
(BR)
(BR)
I
I
I
I
I
R
R
R
R
R
0
F
D
T
j
Symbol
= 2 5 °C
R
R
T
thJA
thJA
T
0.4
stg
j
V
F
140
Min
40
70
- Forward Voltage (V)
0.8
- 65 to + 175
Scattering Limit
Typ.
0.5
0.5
0.5
1.2
Value
1
500
500
175
Document Number 85538
1.6
Rev. 2.0, 07-Mar-06
1000
Max
0.5
3
1
1
1
3
2.0
K/W
K/W
Unit
°C
°C
Unit
mV
µA
nA
nA
nA
nA
pF
V
V
V

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