BAQ33-GS18 Vishay, BAQ33-GS18 Datasheet - Page 2

• Manufacturer Part Number: BAQ33-GS18
• Description: Diodes (General Purpose, Power, Switching) 40 Volt 200mA 2.0 Amp IFSM
• Manufacturer: Vishay

Specifications of BAQ33-GS18

• Product: General Purpose Diodes
• Peak Reverse Voltage: 40 V
• Forward Continuous Current: 0.2 A
• Max Surge Current: 2 A
• Configuration: Single
• Forward Voltage Drop: 1 V
• Maximum Reverse Leakage Current: 0.001 uA
• Operating Temperature Range: + 175 C
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Package / Case: SOD-80-2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

BAQ33 / 34 / 35
Vishay Semiconductors
Electrical Characteristics
T
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
www.vishay.com
2
Forward voltage
Reverse current
Breakdown voltage
Diode capacitance
amb
94 9079
94 9078
= 25 °C, unless otherwise specified
10000
Figure 1. Reverse Current vs. Junction Temperature
1000
1000
100
100
0.1
10
10
Figure 2. Forward Current vs. Forward Voltage
1
1
Parameter
0
0
T
V
j
= 25 °C
R
Scattering Limit
T
= V
j
0.4
40
- Junction Temperature (°C)
V
RRM
F
- Forward Voltage (V)
0.8
80
Scattering Limit
120
1.2
I
E ≤ 300 lx, rated V
E ≤ 300 lx, rated V
E ≤ 300 lx, V
E ≤ 300l x, V
E ≤ 300 lx, V
I
I
V
F
R
R
R
= 100 mA
= 5 µA, t
= 5 µA, t
= 0, f = 1 MHz
160
1.6
Test condition
p
p
/T = 0.01, t
/T = 0.01, t
R
R
R
200
2.0
= 15 V
= 30 V
= 60 V
R
R
, T
p
j
p
= 125 °C
= 0.3 ms
= 0.3 ms
BAQ33
BAQ34
BAQ35
BAQ33
BAQ34
BAQ35
Part
Symbol
V
V
V
C
V
(BR)
(BR)
(BR)
I
I
I
I
I
R
R
R
R
R
F
D
140
Min
40
70
Typ.
0.5
0.5
0.5
1
Document Number 85537
Rev. 1.7, 09-Dec-05
Max
0.5
1
3
1
1
1
3
Unit
μA
nA
nA
nA
nA
pF
V
V
V
V