EMG5DXV5T1 ON Semiconductor, EMG5DXV5T1 Datasheet

Digital Transistors 50V Dual BRT NPN

EMG5DXV5T1

Manufacturer Part Number
EMG5DXV5T1
Description
Digital Transistors 50V Dual BRT NPN
Manufacturer
ON Semiconductor
Datasheet

Specifications of EMG5DXV5T1

Configuration
Dual Common Emitter
Transistor Polarity
NPN
Typical Input Resistor
10 KOhms
Typical Resistor Ratio
0.21
Mounting Style
SMD/SMT
Package / Case
SOT-553-5
Collector- Emitter Voltage Vceo Max
50 V
Continuous Collector Current
0.1 A
Peak Dc Collector Current
100 mA
Power Dissipation
230 mW
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
EMG5DXV5T1
Manufacturer:
GLEAM
Quantity:
29
EMG2DXV5T1,
EMG5DXV5T1
Dual Bias Resistor
Transistors
NPN Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base−emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the
SOT−553 package which is designed for low power surface mount
applications.
Features
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 x 1.0 inch Pad
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2005
October, 2005 − Rev. 0
THERMAL CHARACTERISTICS
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Total Device Dissipation
T
Derate above 25°C
Thermal Resistance −
Thermal Resistance −
Junction and Storage
Temperature Range
This new series of digital transistors is designed to replace a single
A
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Moisture Sensitivity Level: 1
Available in 8 mm, 7 inch Tape and Reel
Lead−Free Solder Plating
Pb−Free Packages are Available
= 25°C
Junction-to-Ambient
Junction-to-Lead
Characteristic
Rating
(T
A
= 25°C unless otherwise noted)
Preferred Devices
Symbol
Symbol
T
V
V
R
R
J
P
CBO
CEO
, T
I
qJA
qJL
C
D
stg
230 (Note 1)
338 (Note 2)
540 (Note 1)
370 (Note 2)
264 (Note 1)
287 (Note 2)
−55 to +150
1.8 (Note 1)
2.7 (Note 2)
Value
Max
100
50
50
1
mAdc
°C/W
°C/W
°C/W
Unit
Unit
mW
Vdc
Vdc
°C
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
(Note: Microdot may be in either location)
5
DT
ORDERING INFORMATION
R1
r2
BIAS RESISTOR
xx = Device Code
M = Date Code
G = Pb−Free Package
(4)
TRANSISTORS
http://onsemi.com
NPN SILICON
(3)
1
R2
xx= UF (EMG5)
1
MARKING
DIAGRAM
5
XX M G
UP (EMG2)
Publication Order Number:
G
(2)
CASE 463B
R2
SOT−553
EMG5DXV5/D
R1
DT
(1)
r1
(5)

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EMG5DXV5T1 Summary of contents

Page 1

... EMG2DXV5T1, EMG5DXV5T1 Preferred Devices Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors ...

Page 2

... 1.0 kW Output Voltage (off 5 0 Input Resistor Resistor Ratio 3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% 350 300 250 200 150 100 50 0 −50 EMG2DXV5T1, EMG5DXV5T1 (T = 25°C unless otherwise noted) A Symbol = CBO = CEO = 0)EMG2DXV5T1 I C EBO EMG5DXV5T1 (BR)CBO ...

Page 3

... COLLECTOR CURRENT (mA) C Figure 2. V versus I CE(sat) 1 0.8 0.6 0.4 0 REVERSE BIAS VOLTAGE (VOLTS) R Figure 4. Output Capacitance 100 0.1 0 Figure 6. Input Voltage versus Output Current EMG2DXV5T1, EMG5DXV5T1 1000 25°C 100 75° 100 MHz 25° 0.1 0.01 0.001 Figure 5. Output Current versus Input Voltage = 0 ...

Page 4

... TYPICAL ELECTRICAL CHARACTERISTICS − EMG5DXV5T1 0.1 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 7. V versus I CE(sat) 4 3.5 3 2.5 2 1 REVERSE BIAS VOLTAGE (VOLTS) R Figure 9. Output Capacitance 0.1 0 Figure 11. Input Voltage versus Output Current EMG2DXV5T1, EMG5DXV5T1 300 T = −25° 250 25°C 200 75° ...

Page 5

... EMG2DXV5T1, EMG5DXV5T1 TYPICAL APPLICATIONS FOR NPN BRTs +12 V FROM mP OR OTHER LOGIC Figure 12. Level Shifter: Connects Volt Circuits to Logic V CC OUT IN Figure 13. Open Collector Inverter: Inverts the Input Signal http://onsemi.com ISOLATED LOAD Figure 14. Inexpensive, Unregulated Current Source 5 +12 V LOAD ...

Page 6

... EMG2DXV5T5 EMG2DXV5T5G EMG5DXV5T1 EMG5DXV5T1G EMG5DXV5T5 EMG5DXV5T5G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. EMG2DXV5T1, EMG5DXV5T1 Package SOT−553 SOT−553 (Pb−Free) SOT−553 SOT−553 (Pb−Free) SOT− ...

Page 7

... Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com EMG2DXV5T1, EMG5DXV5T1 PACKAGE DIMENSIONS SOT−553 XV5 SUFFIX 5−LEAD PACKAGE CASE 463B− ...

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