DTA143TXV3T1 ON Semiconductor, DTA143TXV3T1 Datasheet

Digital Transistors 100mA 50V BRT PNP

DTA143TXV3T1

Manufacturer Part Number
DTA143TXV3T1
Description
Digital Transistors 100mA 50V BRT PNP
Manufacturer
ON Semiconductor
Datasheet

Specifications of DTA143TXV3T1

Configuration
Single
Transistor Polarity
PNP
Typical Input Resistor
4.7 KOhms
Mounting Style
SMD/SMT
Package / Case
SC-89-3
Collector- Emitter Voltage Vceo Max
50 V
Continuous Collector Current
0.1 A
Peak Dc Collector Current
100 mA
Power Dissipation
0.2 W
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
DTA114EXV3T1 Series
Digital Transistors (BRT)
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
device and its external resistor bias network. The digital transistor
contains a single transistor with a monolithic bias network consisting
of two resistors; a series base resistor and a base−emitter resistor. The
digital transistor eliminates these individual components by
integrating them into a single device. The use of a digital transistor can
reduce both system cost and board space. The device is housed in the
SC−89 package which is designed for low power surface mount
applications.
MAXIMUM RATINGS
January, 2004 − Rev. 0
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
This new series of digital transistors is designed to replace a single
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Available in 8 mm, 7 inch/3000 Unit Tape & Reel
Lead−Free Plating (Pure Sn)
Semiconductor Components Industries, LLC, 2004
Rating
(T
A
= 25 C unless otherwise noted)
Preferred Devices
Symbol
V
V
CBO
CEO
I
C
Value
100
50
50
1
mAdc
Unit
Vdc
Vdc
Preferred devices are recommended choices for future use
and best overall value.
(INPUT)
BASE
PIN 1
xx = Specific Device Code
D = Date Code
MARKING DIAGRAM
(See Marking Table on page 2)
TRANSISTORS
http://onsemi.com
PNP SILICON
R1
R2
1
CASE 463C
DIGITAL
STYLE 1
3
SC−89
xx D
1
3
Publication Order Number:
2
2
(GROUND)
EMITTER
COLLECTOR
PIN 2
(OUTPUT)
DTA114EXV3T1/D
PIN 3

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DTA143TXV3T1 Summary of contents

Page 1

... Digital Transistors (BRT) PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The digital transistor eliminates these individual components by integrating them into a single device ...

Page 2

... DTA114EXV3T1 6A 10 DTA124EXV3T1 6B 22 DTA144EXV3T1 6C 47 DTA114YXV3T1 6D 10 DTA114TXV3T1 6E 10 DTA143TXV3T1 6F 4.7 DTA144WXV3T1 6P 47 DTA144TXV3T1 6T 47 DTA143XXV3T1 6R 4.7 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. THERMAL CHARACTERISTICS ...

Page 3

... Emitter−Base Cutoff Current ( Collector−Base Breakdown Voltage ( Collector−Emitter Breakdown Voltage (Note 2.0 mA CHARACTERISTICS (Note 3) DC Current Gain ( 5.0 mA Collector−Emitter Saturation Voltage ( mA mA 5.0 mA) DTA123EXV3T1 mA 1.0 mA) DTA114TXV3T1/ DTA143TXV3T1 DTA143ZXV3T1/DTA124XXV3T1/DTA143EXV3T1 Output Voltage ( Output Voltage (off ...

Page 4

... SINGLE PULSE 0.001 0.00001 0.0001 0.001 DTA114EXV3T1 Series (continued unless otherwise noted) A Symbol DTA114EXV3T1 R1 DTA124EXV3T1 DTA144EXV3T1 DTA114YXV3T1 DTA114TXV3T1 DTA143TXV3T1 DTA144WXV3T1 DTA144TXV3T1 DTA143XXV3T1 600 C 100 T , AMBIENT TEMPERATURE ( C) A Figure 1. Derating Curve 0.01 0.1 t, TIME (s) Figure 2. Normalized Thermal Response http://onsemi ...

Page 5

TYPICAL ELECTRICAL CHARACTERISTICS − DTA114EXV3T1 − COLLECTOR CURRENT (mA) C Figure 3. V versus I CE(sat ...

Page 6

TYPICAL ELECTRICAL CHARACTERISTICS − DTA124EXV3T1 − 0.1 0. COLLECTOR CURRENT (mA) C Figure 8. V versus I CE(sat ...

Page 7

TYPICAL ELECTRICAL CHARACTERISTICS − DTA144EXV3T1 − 0.1 0. COLLECTOR CURRENT (mA) C Figure 13. V versus I CE(sat) 1 0.8 0.6 0.4 0.2 0 ...

Page 8

TYPICAL ELECTRICAL CHARACTERISTICS − DTA114YXV3T1 0 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 18. V versus I CE(sat) 4.5 4 3.5 3 2.5 2 ...

Page 9

TYPICAL ELECTRICAL CHARACTERISTICS — DTA144WXV3T1 − COLLECTOR CURRENT (mA) C Figure 23. Maximum Collector Voltage versus Collector Current 1.4 1.2 1.0 0.8 ...

Page 10

... M N SEATING −T− PLANE N. American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 10 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14 ...

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