NSBC124EPDXV6T5 ON Semiconductor, NSBC124EPDXV6T5 Datasheet
NSBC124EPDXV6T5
Specifications of NSBC124EPDXV6T5
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NSBC124EPDXV6T5 Summary of contents
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... The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the NSBC114EPDXV6T1 series, two complementary BRT devices are housed in the SOT− ...
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DEVICE MARKING AND RESISTOR VALUES Device NSBC114EPDXV6T1G NSBC124EPDXV6T1G NSBC144EPDXV6T1G NSBC114YPDXV6T1G NSBC114TPDXV6T1G (Note 2) NSBC143TPDXV6T1G (Note 2) NSBC113EPDXV6T1G (Note 2) NSBC123EPDXV6T1G (Note 2) NSBC143EPDXV6T1G (Note 2) NSBC143ZPDXV6T1G (Note 2) NSBC124XPDXV6T1G (Note 2) NSBC123JPDXV6T1G (Note 2) ELECTRICAL CHARACTERISTICS (T = 25°C unless ...
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ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted, common for Q A Characteristic ON CHARACTERISTICS (Note 3) Collector-Emitter Saturation Voltage ( mA 0 ...
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ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted, common for Q A Characteristic ON CHARACTERISTICS (Note 3) Input Resistor Resistor Ratio 2. New resistor combinations. Updated curves to follow in subsequent data sheets. 3. Pulse Test: Pulse Width < 300 ...
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TYPICAL ELECTRICAL CHARACTERISTICS − NSBC114EPDXV6T1 NPN TRANSISTOR 0.1 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 2. V versus I CE(sat ...
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TYPICAL ELECTRICAL CHARACTERISTICS − NSBC114EPDXV6T1 PNP TRANSISTOR -25°C A 0.1 75°C 0. COLLECTOR CURRENT (mA) C Figure 7. V versus I CE(sat ...
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TYPICAL ELECTRICAL CHARACTERISTICS − NSBC124EPDXV6T1 NPN TRANSISTOR -25°C A 0.1 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 12. V versus I CE(sat ...
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TYPICAL ELECTRICAL CHARACTERISTICS − NSBC124EPDXV6T1 PNP TRANSISTOR -25°C A 0.1 0. COLLECTOR CURRENT (mA) C Figure 17. V versus I CE(sat ...
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TYPICAL ELECTRICAL CHARACTERISTICS − NSBC144EPDXV6T1 NPN TRANSISTOR -25°C A 0.1 0. COLLECTOR CURRENT (mA) C Figure 22. V versus I CE(sat) 1 0.8 0.6 0.4 0.2 ...
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TYPICAL ELECTRICAL CHARACTERISTICS − NSBC144EPDXV6T1 PNP TRANSISTOR -25°C A 0.1 0. COLLECTOR CURRENT (mA) C Figure 27. V versus I CE(sat) 1 0.8 0.6 0.4 0.2 ...
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TYPICAL ELECTRICAL CHARACTERISTICS − NSBC114YPDXV6T1 NPN TRANSISTOR 0.1 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 32. V versus I CE(sat) 4 3.5 3 2.5 2 1.5 1 0.5 ...
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TYPICAL ELECTRICAL CHARACTERISTICS − NSBC114YPDXV6T1 PNP TRANSISTOR 0.1 75°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 37. V versus I CE(sat) 4.5 4 3.5 3 2.5 2 ...
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TYPICAL ELECTRICAL CHARACTERISTICS − NSBC114TPDXV6T1 1000 100 1 COLLECTOR CURRENT (mA) C Figure 42. DC Current Gain − PNP TYPICAL ELECTRICAL CHARACTERISTICS − NSBC143TPDXV6T1 1000 100 1 COLLECTOR CURRENT (mA) C Figure 44. DC ...
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... M *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...