MUN5215DW1T1 ON Semiconductor, MUN5215DW1T1 Datasheet - Page 3

• Manufacturer Part Number: MUN5215DW1T1
• Description: Digital Transistors 100mA 50V BRT Dual
• Manufacturer: ON Semiconductor

Specifications of MUN5215DW1T1

• Configuration: Dual
• Transistor Polarity: NPN
• Typical Input Resistor: 10 KOhm
• Mounting Style: SMD/SMT
• Package / Case: SOT-363
• Collector- Emitter Voltage Vceo Max: 50 V
• Continuous Collector Current: 0.1 A
• Peak Dc Collector Current: 100 mA
• Power Dissipation: 187 mW
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V
Collector-Emitter Cutoff Current (V
Emitter-Base Cutoff Current
Collector-Base Breakdown Voltage (I
Collector-Emitter Breakdown Voltage (Note 3) (I
(V
EB
= 6.0 V, I
C
= 0)
Characteristic
CB
CE
= 50 V, I
C
= 50 V, I
= 10 mA, I
(T
A
E
= 25°C unless otherwise noted, common for Q
= 0)
B
= 0)
C
E
MUN5211DW1T1G
MUN5212DW1T1G
MUN5213DW1T1G
MUN5214DW1T1G
MUN5215DW1T1G
MUN5216DW1T1G
MUN5230DW1T1G
MUN5231DW1T1G
MUN5232DW1T1G
MUN5233DW1T1G
MUN5234DW1T1G
MUN5235DW1T1G
MUN5236DW1T1G
MUN5237DW1T1G
= 2.0 mA, I
= 0)
http://onsemi.com
B
= 0)
3
V
V
Symbol
(BR)CBO
(BR)CEO
I
I
I
CBO
CEO
EBO
1
and Q
Min
50
50
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
2
)
Typ
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Max
0.18
0.13
0.05
0.13
100
500
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.2
−
−
mAdc
nAdc
nAdc
Unit
Vdc
Vdc